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Stability and Conformation of Silicon-Carbon Compounds. A Case Study of SiC2, Si2C and Si3

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Understanding Molecular Properties

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Abstract

We discuss the binding in the C2, SiC, Si2, C3, SiC2, Si2C and Si3 molecules in terms of an orbital picture. Walsh diagrams are used to give an understanding of the geometry of the triatomic molecules in their ground and excited states. We show that introduction of silicon atoms in the homologous series tends to decrease the strength of the bonds and make the triatomic compounds more stable in the bent conformation.

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Author information

Author notes

  1. John R. Sabine

    Present address: Department of Physics, University of Florida, Gainesville, Florida, 32611, USA

Authors and Affiliations

  1. Department of Chemistry, Odense University, Campusvej 55, DK-5230, Odense M, Denmark

    Jens Oddershede & John R. Sabine

  2. Max-Planck-Institut für Physik und Astrophysik, Institut für Astrophysik, Karl-Schwarzschild-Strasse 1, D-8046, Garching-bei-München, Federal Republic of Germany

    Geerd H. F. Diercksen

Authors
  1. Jens Oddershede
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  2. John R. Sabine
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  3. Geerd H. F. Diercksen
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Editor information

Editors and Affiliations

  1. Department of Physical Chemistry, University of Copenhagen, Denmark

    John Avery  & Aage E. Hansen  & 

  2. Department of Physical Chemistry, The Technical University of Denmark, Lyngby, Denmark

    Jens Peder Dahl

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© 1987 D. Reidel Publishing Company

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Oddershede, J., Sabine, J.R., Diercksen, G.H.F. (1987). Stability and Conformation of Silicon-Carbon Compounds. A Case Study of SiC2, Si2C and Si3 . In: Avery, J., Dahl, J.P., Hansen, A.E. (eds) Understanding Molecular Properties. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3781-9_29

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  • DOI: https://doi.org/10.1007/978-94-009-3781-9_29

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8182-5

  • Online ISBN: 978-94-009-3781-9

  • eBook Packages: Springer Book Archive

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