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Electronic Structure of Semiconductor Heterojunctions pp 70–98Cite as

Compositionally Graded Semiconductors and their Device Applications

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Part of the book series: Perspectives in Condensed Matter Physics ((PCMP,volume 1))

Abstract

This paper reviews the electronic transport properties of compositionally graded materials. Band gap grading is a powerful tool for engineering the energy band diagram of a device and thus modifying its electrical transport properties (band gap engineering) (1). The most interesting property, which has far reaching consequences for devices made of these materials, is that electrons and holes experience different electric forces so the transport properties of the two types of carriers can be independently tuned.

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Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, New Jersey, 07974, USA

    Federico Capasso

Authors
  1. Federico Capasso
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Editor information

Editors and Affiliations

  1. University of Wisconsin-Madison, USA

    Giorgio Margaritondo

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© 1988 Editoriale Jaca Book Spa, Milano

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Capasso, F. (1988). Compositionally Graded Semiconductors and their Device Applications. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_5

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  • DOI: https://doi.org/10.1007/978-94-009-3073-5_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-277-2824-1

  • Online ISBN: 978-94-009-3073-5

  • eBook Packages: Springer Book Archive

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