Abstract
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5-2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.
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© 1988 Editoriale Jaca Book Spa, Milano
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Niles, D.W., Margaritondo, G., Perfetti, P., Quaresima, C., Capozi, M. (1988). Heterojunction band discontinuity control by ultrathin intralayers. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_37
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DOI: https://doi.org/10.1007/978-94-009-3073-5_37
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