Abstract
Whereas the conventional practice of referring binding energies of deep donors and acceptors to the band edges of the host semiconductor does not produce transparent chemical trends when the same impurity is compared in different crystals, referring them to the vacuum level through the use of the photothreshold reveals a remarkable material invariance of the levels in III-V and II-VI semiconductors. It is shown that this is a consequence of the antibonding nature of the deep gap level with respect to the impurity atom-host orbital combinations.
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© 1988 Editoriale Jaca Book Spa, Milano
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Caldas, M.J., Fazzio, A., Zunger, A. (1988). A universal trend in the binding energies of deep impurities in semiconductors. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_30
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DOI: https://doi.org/10.1007/978-94-009-3073-5_30
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