Abstract
Self-consistent pseudopotential calculations of the electronic structure of the (110) Ge-ZnSe interface (IF) indicate a density of localized IF states that may be experimentally detectable. The full spectrum is presented and the character of the IF states is discussed. Evaluations of the bond charges indicate little charge transfer parallel to the IF. A proposed relaxation of atoms at the IF is also presented. The detailed electronic structure of Ge-ZnSe is found not to be a simple extension of that of Fe-GaAs.
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We have recently found that the charge transfer at the Ge-Gs interface, reported in Refs. 3 and 7, is in error. In fact, only ~0.02 electrons are transferred from the Ge-As bond to the Ge-Ga bond at that interface.
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© 1988 Editoriale Jaca Book spa, Milano
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Pickett, W.E., Cohen, M.L. (1988). Self-consistent electronic structure of (110) Ge-ZnSe. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_27
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DOI: https://doi.org/10.1007/978-94-009-3073-5_27
Publisher Name: Springer, Dordrecht
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