Abstract
It is argued that the absolute hydrostatic deformation potentials recently calculated for tetrahedral semiconductors with the linear muffin-tin-orbital method must be screened by the dielectric response of the material before using them to calculate electron-phonon interaction. This screening can be estimated by using the midpoint of an average dielectric gap evaluated at special (Baldereschi) points of the band structure. This dielectric midgap energy (DME) is related to the charge-neutrality point introduced by Tejedor and Flores, and also by Tersoff, to evaluate band offsets in heterojunctions and Schottky-barrier heights. We tabulate band offsets obtained with this method for several heterojunctions and compare them with other experimental and theoretical results. The DME’s are tabulated and compared with those of Tersoff’s charge-neutrality points.
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References
J. Bardeen and W. Shockley, Phys. Rev. 80, 72 (1950)
C. Herring and E. Yogt, ibid. 101,944 (1956).
J. A. Vergés, D. Glötzel, M. Cardona, and O. K. Andersen, Phys. Status Solidi B 113,519(1982).
O. K. Andersen, Phys. Rev. B 12, 3060 (1975).
D. Penn, Phys. Rev. 128, 2093 (1962).
A. Baldereschi, Phys. Rev. B 7, 5212 (1973).
C. Tejedor, F. Flores, and E. Louis, J. Phys. C 10,2163 (1977).
F. Flores and C. Tejedor, J. Phys. C 12,731 (1979).
J. Tersoff, Phys. Rev. Lett. 52,465 (1984).
J. Tersoff, Phys. Rev. B 30, 4874 (1984)
see also W. A. Harrison and J. Tersoff, J. Vac. Sci. Technol. B 4, 1068 (1986).
J. Tersoff; in Heterojunctions: A Modern View oJ Band Discontinuities and Applications edited by G. Margaritondo and F. Capasso (North-Holland, Amsterdam, in press).
F. S. Khan and P. B. Allen, Phys. Rev. B 29, 3341 (1984)
S. Rodriguez and E. Kartheuser, ibid. 33, 772 (1986).
J. Bok and M. Combescot, in Proceedings oj the International Conference on the Physics of Semiconductors, Stockholm, 1986 (World Science, Singapore, 1987).
L. Vina, S. Logothetidis, and M. Cardona, Phys. Rev. B 30, 1979 (1984).
M. Cardona, in Atomic Structure and Properties of Solids, ediled by E. Burstein (Academic, New York, 1972), p. 51.4.
See, for instance, J. R. Chelikowski and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
F. H. Pollak, M. Cardona, C. W. Higginbotham, F. Herman, and J. P. Van Dyke, Phys. Rev. B 2, 352 (1971).
N. E. Christensen, Phys. Rev. B 30, 5753 (1984).
G. B. Bachelet and N. E. Christensen, Phys. Rev. B 31, 879 (1985).
M. S. Hybertsen and S. G. Louie, Phys. Rev. Lett. 55, 1418 (1985).
J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973).
R. H. Lyddane, R. G. Sachs, and E. Teller, Phys. Rev. 59, 673 (1941).
W. A. Harrison, Electronic Structure and the Properties of Solids (Freeman, San Francisco, 1980).
J. Tersoff (private communication).
C. G. Van de Walle, C. Herring, and R. M. Martin, Phys. Rev. B (to be published).
J. D. Wiley, Solid State Commun. 8, 1865 (1970).
W. Zawadzki, in Physics of Narrow Gap Semiconductors, edited by E. Gornik, H. Heinrich, and L. Palmetshofer (Springer, Heidelberg, 1982), p. 8.
K. W. Nill and A. L. McWhorter, J. Phys. Soc. Jpn. Suppl. 21, 755 (1966).
S. M. Puri, Phys. Rev. 139, A995 (1965).
H. Kahlert and G. Bauer, Phys. Rev. B 7, 2670 (1973).
H. L. Störmer, A. C. Gossard, W. Wiegmann, R. Blondel, and K. Baldwin, Appl. Phys. Lett. 44, 139 (1984).
E. E. Mendez, P. J. Price, and M. Heilblum, Appl. Phys. Lett. 45, 294 (1984).
W. Walukiewicz, H. E. Ruda, J. Lagewski, and H. C. Gatos, Phys. Rev. B 32, 2645 (1985)
P. J. Price, ibid. 32, 2643. (1985)
D. L. Rode, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, p. 84. The argument that the deformation potential of the Г15 valence state should be taken to be zero was early given by H. Ehrenreich, J. Phys. Chem. Solids 2, 131 (1957).
B. Vinter, Phys. Rev. B 33, 5904 (1986)
see also K. Hirakawa and H. Sakaki, Appl. Phys. Lett. 49, 889 (1986). These authors report \(\left| {a_c } \right|\, = 11 \pm {\rm eV}\)
P. Pfeffer, I. Gorczyca, and W. Zawadski, Solid State Commun. 51, 179 (1984).
H. J. Lee, J. Basinski, L.Y. Juravel, and J.C. Woolley, Can. J. Phys. 57,419 (1978).
D. L. Rode, Phys. Rev. B 3, 3287 (1971).
B. R. Nag and G. M. Dutta, J. Phys. C 11, 119 (1978).
P. Lawaetz, Phys. Rev. 183, 730 (1969).
K. Murase, K. Enjouji, and E. Otsuka, Jpn. J. Appl. Phys. 29, 1255 (1970).
L. Pintschovius, J. A. Vergés, and M. Cardona, Phys. Rev. B 26, 5658 (1982).
S. Kocsis, Phys. Status Solidi A 28, 133 (1975).
J. Yokota, J. Phys. Soc. Jpn. 19, 1487 (1964).
V. Pietsch and K. Unger, Phys. Status Solidi A 80, 165 (1983).
C. G. Van de Walle and R. M. Martin, Mater. Res. Soc. Symp. Proc. 63, 21 (1985)
J. Vac. Sci. Technol. B 4, 1055(1986).
C. G. Van de Walle, Ph.D. thesis, Stanford University, Palo Alto, California, 1986 (unpublished).
G. Srinivasan, Phys. Rev. 178, 1248 (1969).
J. O. McCaldin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 36, 56 (1976).
W. R. Frensley and H. Kroemer, Phys. Rev. B 16, 2642 (1977).
J. Tersoff, Phys. Rev. Lett. 56, 2755 (1986).
L. D. Laude, F. H. Pollak, and M. Cardona, Phys. Rev. B 3, 2623 (1971);
M. Chandrasekhar and F. H. Pollak, ibid. 15, 2127 (1977).
C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, and H. J. Herzog, Phys. Rev. Lett. 54, 2441 (1985).
D. V. Lang, R. People, J. C. Bean, and A. M. Sargent, Appl. Phys. Lett. 47, 1333 (1985).
T. F. Kuech, M. Mäenpää, and S. S. Lau, Appl. Phys. Lett. 39, 245 (1981).
G. Margaritondo, A. D. Katnani, N. G. Stoffel, R. R. Daniels, and T. X. Zhao, Solid State Commun. 43, 163 (1982).
P. H. Mahowald, R. S. List, W. E. Spicer, J. Woicik, and P. Pianetta, J. Vac. Sci. Technol. B 3, 1252 (1985).
G. Margaritondo, Phys. Rev. B 31, 2526 (1985).
C. G. Van de Walle and R. M. Martin (unpublished).
S. P. Kowalczyk, W. J. Schaffer, E. A. Kraut, and R. W. Grant, J. Vac. Sci. Technol. 20, 705 (1982).
A. Blacha, H. Presting, and M. Cardona, Phys. Status Solidi B 126,11(1984).
C. Priester, G. Allan, and M. Lanoo, Phys. Rev. B 33, 7386 (1986).
L. M. Claessen, J. C. Maan, M. Altarelli, P. Wyder, L. L. Chang, and L. Esaki, Phys. Rev. Lett. 57, 2556 (1986).
S. Groves and W. Paul, Phys. Rev. Lett. 11, 194 (1963).
M. Cardona and N. E. Christensen, Solid State Commun. 58, 412(1986).
P. Becker (unpublished).
W. H. Appel, Ph.D. thesis, University of Stuttgart, 1985 (unpublished).
H. G. Bruhl, K. Jacobs, W. Seiffert, and J. Maege, Krist. Tech. 14, K29 (1979); see also Ref. 44.
G. Contreras, L. Tapfer, A. K. Sood, and M. Cardona, Phys. Status Solidi B 131, 475 (1987).
J. Ihm and M. L. Cohen, Phys. Rev. B 20, 729 (1979).
M. K. Kelly, D. W. Niles, E. Colavita, G. Margaritondo, and M. Henzler (unpublished), quoted in Ref. 59.
J. Batey and S. L. Wright, J. Appl. Phys. 59, 1200 (1986).
J. Menéndez, A. Pinczuk, D. J. Werder, A. C. Gossard, and J. H. English, Phys. Rev. B 33, 8863 (1966).
J. Menéndez, A. Pinczuk, D. J. Werder, and J. P. Valladares, Solid State Commun. (to be published).
P. Perfetti, F. Patella, F. Settle, C. Quaressima, F. Capasso, A. Savoia, and G. Margaritondo, Phys. Rev. B 30, 4533 (1984).
J. R. Waldrop, E. A. Kraut, S. P. Kowalczyk, and R. W. Grant, Surf. Sci. 132,513 (1983).
J. Sakaki, L. L. Chang, R. Ludeke, C. A. Chang, G. A. Sai-Halasz, and L. Esaki, Appl. Phys. Lett. 31, 211 (1977).
G. A. Sai-Halasz, L. L. Chang, J.-M. Welter, C.-A. Chang, and L. Esaki, Solid State Commun. 27, 935 (1978).
S. P. Kowalczyk, J. T. Cheung, E. A. Kraut, and R. W. Grant, Phys. Rev. Lett. 56, 1605 (1986).
K. J. McKey, P. M. G. Allen, W. G. Herrender-Harker, R. H. Williams, C. R. Whitehouse, and G. M. Williams, Appl. Phys. Lett. 49, 354 (1986).
S. P. Kowalczyk, E. Kraut, J. R. Waldrop, and R. W. Grant, J. Vac. Sci. Technol. 21, 482 (1982).
D. J. Olego, J. P. Faune, and P. M. Racah, Phys. Rev. Lett. 55, 328 (1985)
see also J. M. Berroir, Y. Guldner, and M. Voos, IEEE J. Quantum Electron. QE-22, 1793 (1986).
S. Takatani and Y. W. Chung, Phys. Rev. B 31, 2290 (1985).
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Cardon, M., Christensen, N.E. (1988). Acoustic deformation potentials and heterostructure band offsets in semiconductors. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_26
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DOI: https://doi.org/10.1007/978-94-009-3073-5_26
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