Abstract
Band offsets in (AlxGa1−x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (AlxGa1−x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (AlxGa1−x)As and in the near red region where excitations from the GaAs valence band into the (AlxGa1−x)As conduction band are involved. From the measured energies we determine ΔEc/ΔEg = 0.8 ± 0.03 for x = 0.2.
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© 1988 Editoriale Jaca Book Spa, Milano
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Abstreiter, G., Prechtel, U., Weimann, G., Schlapp, W. (1988). Internal Photoemission in GaAs/(AlxGa1−x)As Heterostructures. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_12
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DOI: https://doi.org/10.1007/978-94-009-3073-5_12
Publisher Name: Springer, Dordrecht
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