Skip to main content
SpringerLink
Log in

Applications of Mössbauer Spectroscopy to Characterize Highly Doped Semiconductors

  • Chapter
Book cover Nuclear Physics Applications on Materials Science

Part of the book series: NATO ASI Series ((NSSE,volume 144))

Abstract

Silicon can be doped with electrically active donors (P, As, Sb) to levels exceeding solid-solubility limits by means of laser- or incoherent-light annealing techniques applied to ion-implanted, amorphized layers. Mössbauer spectroscopy utilizing additionally implanted (radioactive) probe atoms has been employed to characterize some properties of highly doped material. Recent examples are given of the type of microscopic information obtained from such studies.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. L.K. Nanver, G. Weyer, and B.I. Deuten, Phys.Stat.Sol. 61, (1980) K29

    Article  ADS  Google Scholar 

  2. L.K. Nanver, G. Weyer, and B.I. Deuten Z.Phys. B47, 103 (1982)

    Article  ADS  Google Scholar 

  3. G.J. Kemerink, H. de Waard, L. Niesen, and D.O. Boerma, Hyp.Int. 14, 37 and 53 (1983)

    Article  ADS  Google Scholar 

  4. I. Dezsi, M. Van Rossum, G. Langouche, R. Coussement, D. Schroyen, and M.F. Wu, Appl.Phys.Lett. 44, 505 (1984)

    Article  ADS  Google Scholar 

  5. A. Nylandsted Larsen, F.T. Pedersen, G. Weyer, R. Galloni, R. Rizzoli, and A. Armiqliato, J.Appl.Phys. 59, 1908 (1986)

    Article  ADS  Google Scholar 

  6. G. Weyer, A. Nylandsted Larsen, and F.T. Pedersen,Mater.Sci.Forum 10–11, 1135 (1986)

    Google Scholar 

  7. I.V. Nystiryk, and P.P. Seregin, Sov.Phys. Solid State 17, 768 (1975) and 18, 673 (1976)

    Google Scholar 

  8. R.J. Teague, C.M. Yaqnik, G.J. Long, R. Gerson, and L.D. Lafleur, Solid State Commun. 9, 1695 (1971)

    Article  Google Scholar 

  9. H. Andreasen, G.J. Kemerink, H. de Waard, and G. Weyer, to be published

    Google Scholar 

  10. G. Weyer, H. Andreasen, and H. de Waard, Phys.Stat.Sol. (b) 132, 219 (1980)

    Google Scholar 

  11. G. Weyer, A. Nylandsted Larsen, and N.E. Holm Nielsen, Phys.Rev. B 21, 4939 (1980)

    Article  ADS  Google Scholar 

  12. A. Nylandsted Larsen, P. Tidemand-Petersson, G. Weyer, and P.E. Andersen, to be published

    Google Scholar 

  13. K. Nishi, K. Sakamoto, and J. Uedo, J.Appl.Phys. 59, 4177 (1986)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Physics, University of Aarhus, Dk-8000, Aarhus C, Denmark

    G. Weyer

  2. Isolde Collaboration, CERN, CH-1211, Geneve 23, Switzerland

    G. Weyer

Authors
  1. G. Weyer
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, Konstanz, Germany

    E. Recknagel

  2. Centro de Fisica Nuclear, Universidade de Lisboa, Lisboa Codex, Portugal

    J. C. Soares

Rights and permissions

Reprints and permissions

Copyright information

© 1988 Kluwer Academic Publishers

About this chapter

Cite this chapter

Weyer, G. (1988). Applications of Mössbauer Spectroscopy to Characterize Highly Doped Semiconductors. In: Recknagel, E., Soares, J.C. (eds) Nuclear Physics Applications on Materials Science. NATO ASI Series, vol 144. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2800-8_7

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-2800-8_7

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7759-0

  • Online ISBN: 978-94-009-2800-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation