Abstract
Ion bombardment induced damage in crystalline silicon (c-Si) has been studied extensively. However, due to several implantation variables (temperature, flux, fluence, ion mass and energy) the mechanisms by which a cascade of atomic displacements results in damage are controversial.
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References
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© 1988 Kluwer Academic Publishers
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Keinonen, J. et al. (1988). H-Implantation-Induced Damage in Si. In: Recknagel, E., Soares, J.C. (eds) Nuclear Physics Applications on Materials Science. NATO ASI Series, vol 144. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2800-8_37
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DOI: https://doi.org/10.1007/978-94-009-2800-8_37
Publisher Name: Springer, Dordrecht
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