Abstract
Recent work (1,2) on the control of implanted dopant ion profiles in GaAs has shown there to be an advantage in implanting into amorphous substrates.
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References
Gwilliam R, Deol RS, Blunt R and Sealy BJ: Si implants into pre-amorphised GaAs. Presented at MRS Symposium. Rapid Thermal Processing, Anaheim, USA. (1987).
Graf V and Heuberger W: Shallow Implants into GaAs. Proceedings of IBMM’86 Catania, Italy (1986).
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© 1988 Kluwer Academic Publishers
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Gwilliam, R., Deol, R.S., Sealy, B.J. (1988). MeV Implants Into GaAs. In: Recknagel, E., Soares, J.C. (eds) Nuclear Physics Applications on Materials Science. NATO ASI Series, vol 144. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2800-8_25
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DOI: https://doi.org/10.1007/978-94-009-2800-8_25
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7759-0
Online ISBN: 978-94-009-2800-8
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