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Semiconductor Device Reliability pp 507–516Cite as

Reliability of Short Channel Silicon and SOI VLSI Devices and Circuits

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Part of the book series: NATO ASI Series ((NSSE,volume 175))

Abstract

This is a review of hot electron induced degradation in state-of-the-art MOS silicon devices. First the various hot electron processes and resulting currents are defined, and the device degradation symptoms are established. Approaches to model the device reliability and to characterize the degradation are then reviewed. Finally device designs for enhanced reliability are introduced, and it is shown in particular how silicon-on-insulator (SOI) technology may reduced hot electron degradation.

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Authors and Affiliations

  1. Electrical Engineering Department, University of Maryland, College Park, MD, 20742, USA

    Dimitris E. Ioannou

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  1. Dimitris E. Ioannou
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Editor information

Editors and Affiliations

  1. Surface Physics Branch, Naval Research Laboratory, Washington, D.C., USA

    A. Christou

  2. Bell Communications Research, Red Bank, NJ, USA

    B. A. Unger

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© 1990 Kluwer Academic Publishers

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Ioannou, D.E. (1990). Reliability of Short Channel Silicon and SOI VLSI Devices and Circuits. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_30

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  • DOI: https://doi.org/10.1007/978-94-009-2482-6_30

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7620-3

  • Online ISBN: 978-94-009-2482-6

  • eBook Packages: Springer Book Archive

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