Abstract
Human Body Model (HBM) electrostatic discharge (ESD) step stressing has been applied to commercial, 1.3 micron Fabry-Perot semiconductor lasers. ESD failure voltages varied by a factor of 5 among the commercial products tested. The static L-I data for each longitudinal mode exhibit larger changes with ESD stress than the total L-I data. In addition, the modal L-I data show a clear trend of degradation at stress levels well below the failure voltage. The total and modal L-I characteristics were numerically modeled using a rate equation analysis, including third order gain suppression and a linear change in peak gain wavelength with drive current. Theoretical results indicate that the modal L-I relations are much more sensitive than the total L-I to the simulated ESD stress, in agreement with the experimental data. The dynamic rate equations were numerically solved for a step change in drive current and predict that the individual mode dynamics are more sensitive to the simulated ESD stress than the total output. Implications of these findings upon the dispersion penalty for optical communications systems are discussed.
This work was performed as part of a Bellcore internship.
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References
Casey, H.C. and Panish, M.B., Heterostructure Lasers, Chapter 8.
Kumada, S., Shimizu, H., and Itoh, K., “Lifetimes of 800 nm-Wavelength GaAlAs Semiconductor Lasers”, International Reliability Physics Symposium Proceedings 21, 153–9 (1983).
Sim, S.P., Robertson, M.J., and Plumb, R.G., “Catastrophic and Latent Damage in GaAlAs Lasers Caused by Electrical Transients”, J. Appl. Phys. 55, 3950–5, (1984).
Hori, H., Endo, K., Kono, E., and Sakurai, T., “Mode-Transition Characteristics and Tunability of an AlGaAs Laser”, J. Appl. Phys. 60, 2231–7, (1986).
Yamada, M. and Suematsu, Y., “Analysis of Gain Suppression in Undoped Injection Lasers”, J. Appl. Phys. 52, 2653–64, (1981).
Asada, M. and Suematsu, Y., “Density-Matrix Theory of Semiconductor Lasers with Relaxation Broadening Model — Gain and Gain-Suppression in Semiconductor Lasers”, IEEE J. Quant. Electr. QE-21, 434–42, (1985).
Chemelli, R.G. and DeChiaro, L.F., “The Characterization and Control of Leading Edge Transients From Human Body Model ESD Simulators”, EOS/ESD Symposium Proceedings, EOS-7, 155–62, (1985).
Ohtsu, M., Otsuka, Y., and Teramachi, Y., “Precise Measurements and Computer Simulations of Mode-Hopping Phenomena in Semiconductor Lasers”, Appl. Phys. Lett. 46, 108–10, (1985).
Ohtsu, M., Teramachi, Y., Otsuka, Y., and Osaki, A., “Analyses of Mode-Hopping Phenomena in an AlGaAs Laser”, IEEE J. Quant. Electr. QE-22, 535–43, (1986).
For example, see Saunders, P.T., An Introduction to Catastrophe Theory, Cambridge University Press, (1980).
Hioe, F.T. and Singh, S., “Correlations, Transients, Bistability, and Phase-Transition Analogy in Two-Mode Lasers”, Phys. Rev. A 24, 2050–74, (1981).
Lee, T.P., Burrus, CA., Copeland, J.A., Dentai, A.G., and Marcuse, D., “Short-Cavity InGaAsP Injection Lasers: Dependence of Mode Spectra and Single-Longitudinal-Mode Power on Cavity Length”, IEEE J. Quant. Electr. QE-18, 1101–13, (1982).
Miller, S.E., “On Fluctuations and Transients in Injection Lasers”, IEEE J. Quant. Electr. QE-20, 1032–44, (1984).
Nakamura, M., Aiki, K., Chinone, N., Ito, R. and Umeda, J., “Longitudinal-Mode Behaviors of Mode-Stabilized AlxGa1-xAs Injection Lasers”, J. Appl. Phys. 49, 4644–8, (1978).
Chinone, N., Kuroda, T., Ohtoshi, T., Takahashi, T. and Kajimura, T., “Mode-Hopping Noise in Index-Guided Semiconductor Lasers and its Reduction by Saturable Absorbers”, IEEE J. Quant. Electr. QE-21, 1264–70, (1985).
DeChiaro, L.F., An Experimental And Theoretical Investigation of Magnetic Ordering In Yttrium Iron Garnet, Dissertation, Stevens Institute of Technology, (1979).
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© 1990 Kluwer Academic Publishers
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Dechiaro, L.F., Brick-Rodriguez, C.D., Chemelli, R.G., Krupsky, J.W. (1990). An Experimental and Theoretical Investigation of Degradation in Semiconductor Lasers Resulting from Electrostatic Discharge. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_22
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DOI: https://doi.org/10.1007/978-94-009-2482-6_22
Publisher Name: Springer, Dordrecht
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