Abstract
Ion implantation is a well established technique for semiconductors doping. The annealing of the samples has, however, to be done as the following step and in many cases the results are not well understood. A survey of applications of nuclear techniques for the characterization of the structural and electronic environment of impurity atoms in semiconductors in an atomic scale will be given. The potentialities, sensitivity and limitations of the nuclear techniques will be discussed. In particular, specific examples will be presented to illustrate the perturbed angular correlation (PAC) technique using gama-gama or electron-gama transitions and the Mössbauer spectroscopy in studies of defects in semiconductors.
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© 1990 Kluwer Academic Publishers
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Soares, J.C. (1990). Nuclear Methods in the Characterization of Semiconductor Reliability. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_15
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DOI: https://doi.org/10.1007/978-94-009-2482-6_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7620-3
Online ISBN: 978-94-009-2482-6
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