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Metal Contact Degradation on III–V Compound Semiconductors

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Semiconductor Device Reliability

Part of the book series: NATO ASI Series ((NSSE,volume 175))

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Abstract

Discrete low noise MESFETs, power FETs as well as high speed digital GaAs ICs and monolithic microwave integrated circuits (MMICs) require a stable metal contact technology, low parasitic resistance and a high degree of reliability and reproducibility. Self-aligned gate FETs in digital GaAs integrated circuits require gates which must withstand a high temperature anneal treatment. For long term high temperature applications, stable Ohmic contacts are also required since present AuGe contacts are stable only up to about 350°C. A promising approach for achieving high reliability is through the use of a refractory Ohmic and Schottky contact technology based on amorphous (α-) metallization.

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Author information

Authors and Affiliations

  1. Institute of Electr. Structure and Laser, RCC/FORTH, Heraklion, Crete, Greece

    G. Kiriakidis, Z. Hatzopoulos & C. Michelakis

  2. Naval Research Laboratory, Code 6835, Washington, DC, 20375-5000, USA

    W. T. Anderson

  3. UWCC, School of Elect. Electr. and Systems Eng., P.O. Box 904, Cardiff, CF1 3YH, Wales, G. Britain

    D. V. Morgan

Authors
  1. G. Kiriakidis
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  2. W. T. Anderson
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  3. Z. Hatzopoulos
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  4. C. Michelakis
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  5. D. V. Morgan
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Editor information

Editors and Affiliations

  1. Surface Physics Branch, Naval Research Laboratory, Washington, D.C., USA

    A. Christou

  2. Bell Communications Research, Red Bank, NJ, USA

    B. A. Unger

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© 1990 Kluwer Academic Publishers

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Kiriakidis, G., Anderson, W.T., Hatzopoulos, Z., Michelakis, C., Morgan, D.V. (1990). Metal Contact Degradation on III–V Compound Semiconductors. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_14

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  • DOI: https://doi.org/10.1007/978-94-009-2482-6_14

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7620-3

  • Online ISBN: 978-94-009-2482-6

  • eBook Packages: Springer Book Archive

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