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Theoretical Studies of the Transient Response of Highly Photoexcited Carriers in Semiconductors

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Progress in Electron Properties of Solids

Part of the book series: Physics and Chemistry of Materials with Low-Dimensional Structures ((PCMALS,volume 10))

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Abstract

We review our present theoretical understanding of ultrafast relaxation processes in highly photoexcited electron-hole plasmas in polar semiconductors, with special emphasis on the picosecond and subpicosecond spectroscopy of bulk GaAs and GaAs-based quantum-well structures.

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Author information

Authors and Affiliations

  1. Insitut für Theoretische Physik, Universität Graz, Universitätsplatz 5, A-8010, Graz, Austria

    P. Kocevar

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  1. P. Kocevar
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Editor information

Editors and Affiliations

  1. C.N.R., Dipartimento di Fisica, Università di Pisa, Pisa, Italy

    E. Doni

  2. Istituto di Struttura della Materia, Università di Messina, Messina, Italy

    R. Girlanda

  3. Dipartimento di Fisica, Università di Pisa, Pisa, Italy

    G. Pastori Parravicini

  4. Institut de Physique Théorique, EPFL, Lausanne, Switzerland

    A. Quattropani

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© 1989 Kluwer Academic Publishers

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Kocevar, P. (1989). Theoretical Studies of the Transient Response of Highly Photoexcited Carriers in Semiconductors. In: Doni, E., Girlanda, R., Parravicini, G.P., Quattropani, A. (eds) Progress in Electron Properties of Solids. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 10. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2419-2_9

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  • DOI: https://doi.org/10.1007/978-94-009-2419-2_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7590-9

  • Online ISBN: 978-94-009-2419-2

  • eBook Packages: Springer Book Archive

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