Abstract
A quasiparticle self energy approach directly taking into account the many-body nature of the electron-electron interaction is described which gives an excellent account of the quasiparticle band energies in semiconductors and insulators. The calculated gaps are in excellent agreement with the absorption edge and higher energy features observed in optical probes of semiconductors e.g. Si, Ge, GaAs and AlAs. This first-principles approach can be extended with confidence to novel semiconductor materials such as superlattices which is illustrated here for the Si/Ge strained layer superlattices.
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© 1989 Kluwer Academic Publishers
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Schlüter, M., Hybertsen, M.S. (1989). A Self Energy Approach for Optical Transition Energies in Semiconductors and Superlattices. In: Doni, E., Girlanda, R., Parravicini, G.P., Quattropani, A. (eds) Progress in Electron Properties of Solids. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 10. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2419-2_30
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DOI: https://doi.org/10.1007/978-94-009-2419-2_30
Publisher Name: Springer, Dordrecht
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