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Laboratory Methods for the Preparation of Boron Carbides

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

Boron carbide has a wide phase homogeneity range: B4.0C-B10.5C. Direct synthesis from the elements is possible, but useless. Thin solid films are deposited by chemical vapor deposition (CVD), starting from mixtures of boron halides (BCl3, BBr3) — methane — hydrogen excess. Plasma assisted CVD, at low temperature (400–600°C), gives very hard amorphous films, with a variable carbon content (max. hardness 5000 kg/mm2 for 38 at .C %) ; diborane may be used instead of boron halides. Boron carbide fibers are obtained i) by CVD on boron fibers or ii) by reaction of C.V. Deposited boron onto carbon fiber; fibers are used to reinforce light metallic matrices. Single crystals are obtained by CVD or by zone melting of a B4C rod. Whiskers or platelets are prepared by CVD (starting from CCl4-BCl3-H2 mixtures). Fine, pure, with a variable C content, narrow sized thus promising, powders are obtained by treating BCl3/B2H6-CH4-H2 mixtures in a plasma or laser. Boron carbide is prepared at low temperature i) by carbothermal reduction of B2O3, ii) or by reaction of BCl3-CCl4 in an organic solvent in the presence of sodium. Cracking of boron containing organic precursors is possible, but still expensive.

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  1. Ecole Nationale Supérieure des Mines, 158, cours Fauriel, 42023, Saint-Etienne Cédex 2, France

    F. Thevenot

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  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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Thevenot, F. (1990). Laboratory Methods for the Preparation of Boron Carbides. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_6

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