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Theory of Electronic and Thermal Transport in Boron Carbides

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

The boron carbides are refractory icosahedral boron-rich solids composed of twelve-atom boron rich icosahedral clusters directly linked by covalent bonds and indirectly linked through multiatom chains. The intericosahedral bonding is stronger and stiffer than that within icosahedra. The boron carbides exist as a single phase between about 9 atomic % and somewhat less that 20 atomic % carbon as boron and carbon substitute for one another within an essentially regular lattice structure. The electronic and thermal transport properties of the boron carbides are distinctive. The electronic carriers are small singlet bipolarons. Despite their exceptional hardness, these materials manifest very low thermal conductivities. These transport properties are explained in terms of distinctive features of these materials.

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Author information

Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, New Mexico, 87185, USA

    David Emin

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  1. David Emin
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Editor information

Editors and Affiliations

  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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© 1990 Kluwer Academic Publishers

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Emin, D. (1990). Theory of Electronic and Thermal Transport in Boron Carbides. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_40

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_40

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7444-5

  • Online ISBN: 978-94-009-2101-6

  • eBook Packages: Springer Book Archive

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