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Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

The problem of the electronic transport properties of boron carbide is generalized to the icosahedral boron-rich solids. It is shown that their semiconductor property, which is unique because of the odd electron number of the boron atoms, as well as other common structural and electronic properties can be attributed to the Jahn-Teller effect distorting the icosahedron, reducing its symmetry from Ih to D3d thus explaining the preferred crystal symmetry R3m and leading to a separation of occupied and unoccupied electronic states. The electronic transport properties of boron carbide including several hitherto surprising results are qualitatively interpreted within this band structure model.

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© 1990 Kluwer Academic Publishers

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Werheit, H. (1990). On the Electronic Transport Properties of Boron Carbide. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_39

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_39

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7444-5

  • Online ISBN: 978-94-009-2101-6

  • eBook Packages: Springer Book Archive

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