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Current Status of the Research on III-V Mononitride Thin Films for Electronic and Optoelectronic Applications

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

Continued development and commercialization of optoelectronic devices, including light-emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor mononitride materials containing boron, aluminum, gallium and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. However, recent research has resulted in the fabrication of p-n junctions in cubic boron nitride, the deposition of cubic gallium nitride, as well as, the fabrication of multilayer heterostructures and the formation of thin film solid solutions. Chemical vapor deposition (CVD) has usually been the technique of choice for thin film fabrication. However, more recently these materials have also been deposited by plasma-assisted CVD, reactive ionized-cluster beam deposition, and reactive and ionized molecular beam epitaxy. The objective of this paper will be to review the recent developments in all the III-V nitride thin film materials vis' a' vis' electronic and optoelectronic applications.

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  1. Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC, 27695, USA

    Robert F. Davis

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    Robert Freer

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Davis, R.F. (1990). Current Status of the Research on III-V Mononitride Thin Films for Electronic and Optoelectronic Applications. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_37

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