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Recent Advances Regarding the Definition of the Atomic Environment, Film Growth and Microelectronic Device Development in Silicon Carbide

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

The extreme thermal and electronic properties of silicon carbide provide multiplicative combinations of attributes which lead to one of the highest figures of merit for any semiconductor material for use in high-power, -speed, -temperature, -frequency and radiation hard applications. Structurally, silicon carbide exists in a host of polytypes, the origins of which are incompletely understood. Recent magic angle spinning-NMR studies have provided considerable information regarding the positions of the inequivalent carbon sites in the simple polytypes. The continual development of the deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, and electrical contacts have culminated in a host of solid state devices including field effect transistors capable of operation to 925K. The results of several research programs and the remaining challenges related to the development of silicon carbide vis' a' vis' microelectronics are presented and discussed in this review.

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  1. Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina, 27695, USA

    Robert F. Davis

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  1. Robert F. Davis
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  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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Davis, R.F. (1990). Recent Advances Regarding the Definition of the Atomic Environment, Film Growth and Microelectronic Device Development in Silicon Carbide. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_34

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_34

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