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Defects and Grain Boundaries in High Temperature Deformed α-SiC

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

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Abstract

Transmission electron microscopy analyses of hot pressed SiC deformed at high temperature (1600°C) have been carried out to investigate the defects induced by the deformation inside the crystals and in carbide grain boundaries. They have shown the activation of the basal plane with glide dislocations dissociated into Shockley partials. Loop nucleations have been observed along the dislocation lines. Their formation has been explained by a climb mechanism. Grain boundary dislocations have been found in the deformed samples and considered as a result of a grain boundary sliding.

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Authors and Affiliations

  1. LERMAT — CNRS URA 1317 — ISMRa, Boulevard du Maréchal Juin, 14032, Caen Cedex, France

    J. Vicens, S. J. Lee, E. Laurent-Pinson, G. Nouet & J. L. Chermant

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  1. J. Vicens
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  2. S. J. Lee
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  3. E. Laurent-Pinson
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  4. G. Nouet
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  5. J. L. Chermant
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Editor information

Editors and Affiliations

  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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© 1990 Kluwer Academic Publishers

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Vicens, J., Lee, S.J., Laurent-Pinson, E., Nouet, G., Chermant, J.L. (1990). Defects and Grain Boundaries in High Temperature Deformed α-SiC. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_18

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_18

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7444-5

  • Online ISBN: 978-94-009-2101-6

  • eBook Packages: Springer Book Archive

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