Abstract
The polytypic nature of silicon carbide has been known for many years: that is that the crystal structure exhibits a number of different one-dimensional ordering sequences without any variation in stoichiometry. Although initially regarded as a scientific curiosity, the recent interest in SiC as a device material, as a structural ceramic for engineering applications and as a fibre or whisker reinforcement for composite materials has highlighted the importance of our both understanding and controlling this phenomenon.
This paper will briefly review our understanding of the polytypic structure and transformations in SiC including the possible reasons why some polytypes appear more stable than others.
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Page, T.F. (1990). Silicon Carbide: Structure and Polytypic Transformations. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_14
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DOI: https://doi.org/10.1007/978-94-009-2101-6_14
Publisher Name: Springer, Dordrecht
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