Abstract
Diamond film patterns with line/space dimensions of a few µm were accomplished on Si substrates prepared by reactive-ion etching (RIE) and amorphous-Si masking (ASM) methods, both including a photolithography process. A growth of diamond particles at selective sites was also attained using the RIE method.
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© 1990 Kluwer Academic Publishers
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Kobashi, K. et al. (1990). Selected-Area Deposition of Diamond Films. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_11
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DOI: https://doi.org/10.1007/978-94-009-2101-6_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7444-5
Online ISBN: 978-94-009-2101-6
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