Plasma Measurements in a Magnetron Sputtering Device

Abstract

Magnetron sputtering has proven to be a very useful deposition and etching technique for several reasons, among which are the low heating effect and minimal damage caused to delicate substrates, the ability to cope with almost any metal or alloy, and indeed many insulating materials when reactive or radio frequency (R.F.) sputtering are used, the high rate of coating compared to ordinary diode sputtering, the versatility and adaptability to different shapes and geometries and, last but not the least, the pollution-free nature of the technique (1,3).