Abstract
III–V compound semiconductors are intrinsically the correct solutions for the extreme requirements in high speed signal processing in broadband optical telecommunications. However, parasitic effects have been encountered which currently limit the performance of GaAs devices.
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© 1990 Kluwer Academic Publishers
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Bretagne, J., Jacquin, D., Ferdinand, R. (1990). Kinetics of a Low-Pressure H2 Multipole Discharge Used for GaAs Treatment. In: Auciello, O., Gras-Marti, A., Valles-Abarca, J.A., Flamm, D.L. (eds) Plasma-Surface Interactions and Processing of Materials. NATO ASI Series, vol 176. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1946-4_6
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DOI: https://doi.org/10.1007/978-94-009-1946-4_6
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7369-1
Online ISBN: 978-94-009-1946-4
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