Abstract
The aim of this work is to determine if a dry etch process,as characterised by its etch performance, could be transferred between equipments of very different geometries,by a physical characterisation and the proper transfer of these parameters. The process selected was the etching of polyimide in an O2 plasma being an example of a simple system,yet one that has important technological application as part of the tri-level resist scheme1. The anisotropy of etched features was used to assess the success of the process transfer.
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© 1990 Kluwer Academic Publishers
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Hydes, A.J., Cox, T.I., Hope, D.A.O., Deshmukh, V.G.I. (1990). The Process Transfer of Oxygen Reactive Ion Etching of Polyimide between Different Etch Equipments. In: Auciello, O., Gras-Marti, A., Valles-Abarca, J.A., Flamm, D.L. (eds) Plasma-Surface Interactions and Processing of Materials. NATO ASI Series, vol 176. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1946-4_32
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DOI: https://doi.org/10.1007/978-94-009-1946-4_32
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7369-1
Online ISBN: 978-94-009-1946-4
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