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Optical Diagnostic Techniques for Low Pressure Plasma Processing

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Part of the book series: NATO ASI Series ((NSSE,volume 176))

Abstract

This paper reviews and compares various optical diagnostic techniques for low pressure plasmas used in etching and deposition processes for microelectronics devices. Optical emission induced by electron-molecule collisions is reviewed. Both space and time-resolved measurements, combined with high-resolution lineshape measurements and rare-gas actinometry have yielded information on radical and ion formation processes, ion motion, etc. Absorption techniques are also covered, including UV, visible and IR absorption, using both lamps and tunable lasers to determine absolute number densities of stable molecules and radicals. Laser-spectroscopic techniques covered include laser-induced fluorescence, laser raman scattering, optogalvanic effects, and tunable IR laser absorption.

Surface diagnostic optical techniques are also described briefly, including laser interferometry, ellipsometry, multipass IR absorption, glancing angle reflection absorption, raman scattering, and second harmonic generation. Some of these methods have not yet been employed in plasma environments, but have the potential to yield valuable information.

Much of this material is contained in chapter 1 of a book entitled “Plasma Diagnostics”, ed. D. L. Flamm and O. Auciello, (Academic Press, 1989).

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Donnelly, V.M. (1990). Optical Diagnostic Techniques for Low Pressure Plasma Processing. In: Auciello, O., Gras-Marti, A., Valles-Abarca, J.A., Flamm, D.L. (eds) Plasma-Surface Interactions and Processing of Materials. NATO ASI Series, vol 176. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1946-4_3

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  • DOI: https://doi.org/10.1007/978-94-009-1946-4_3

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