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Applications of Plasma Etching

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Plasma-Surface Interactions and Processing of Materials

Part of the book series: NATO ASI Series ((NSSE,volume 176))

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Abstract

The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques. Due to the anisotropic nature of the etching process it is possible to obtain a much higher packing density on the surface of the IC. In addition, dry etching has a distinct advantage over liquid wet etching since it does not require large quantities of highly purified liquids which later have to be disposed requiring expensive wastewater treatment.

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Author information

Authors and Affiliations

  1. c/o Laboratories RCA, Paul Scherrer Institute, CH-8048, Zürich, Switzerland

    Hans W. Lehmann

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  1. Hans W. Lehmann
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Editor information

Editors and Affiliations

  1. Microelectronics Center of North Carolina, Research Triangle Park, North Carolina, USA

    Orlando Auciello

  2. North Carolina State University, Research Triangle Park, North Carolina, USA

    Orlando Auciello

  3. University of Alicante, Alicante, Spain

    Jose Antonia Valles-Abarca

  4. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Daniel L. Flamm

  5. University of California, Berkeley, USA

    Daniel L. Flamm

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© 1990 Kluwer Academic Publishers

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Lehmann, H.W. (1990). Applications of Plasma Etching. In: Auciello, O., Gras-Marti, A., Valles-Abarca, J.A., Flamm, D.L. (eds) Plasma-Surface Interactions and Processing of Materials. NATO ASI Series, vol 176. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1946-4_27

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  • DOI: https://doi.org/10.1007/978-94-009-1946-4_27

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7369-1

  • Online ISBN: 978-94-009-1946-4

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