Abstract
Reactive ion beam etching (RIBE) offers intrinsic interest as an etch technique and its comparatively low operating pressure (10-4 torr in the bombardment chamber) allows the application of ion beam based surface analytical techniques to monitor the surface during etching. We report here on the RIBE of tungsten with a reactive ion beam generated from a carbon tetrafluoride (CF4)/argon (Ar) gas mixture.
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© 1990 Kluwer Academic Publishers
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Cox, T.I., Deshmukh, V.G.I., Armour, D.G. (1990). Reactive Ion Beam Etching Studies of Tungsten with CF4 Using Ion Scattering Spectroscopy. In: Auciello, O., Gras-Marti, A., Valles-Abarca, J.A., Flamm, D.L. (eds) Plasma-Surface Interactions and Processing of Materials. NATO ASI Series, vol 176. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1946-4_21
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DOI: https://doi.org/10.1007/978-94-009-1946-4_21
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7369-1
Online ISBN: 978-94-009-1946-4
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