Abstract
The fractional quantum Hall effect (FQHE) can only be explained in a framework including electron—electron interactions. While the FQHE at v = 1/3 is treated in terms of electrons in the lowest Landau level and in a single spin state, for e.g. v = 2/3 an unpolarized ground state can be formed from wave functions with both spin orientations [1]. This was considered to be responsible for the dependence of the transport data on the tilt angle of the magnetic field [2]. A strong reduction of the spin polarization was also observed for filling factors close to one and attributed to the formation of a Skyrmion spin texture [3]. A reduction in polarization is expected to manifest itself in a reduction of the strength of the electron spin resonance (ESR).
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© 1996 Kluwer Academic Publishers
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Meisels, R. et al. (1996). Electron Spin Resonance in the Domain of the Fractional Quantum Hall Effect. In: Kramer, B. (eds) Quantum Transport in Semiconductor Submicron Structures. NATO ASI Series, vol 326. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1760-6_20
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DOI: https://doi.org/10.1007/978-94-009-1760-6_20
Publisher Name: Springer, Dordrecht
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