Abstract
The linear DC-response properties of a system subject to an additional time varying perturbation (microwave) are qualitatively different from the case without the perturbation. In such a situation, the usual formulation of linear response has to be changed. We use the Boltzmann—equation to derive a general expression for the conductivity tensor. The theory is valid in the quasi—classical regime which usually is described by Drude—like formulas. As an application of the general formalism, for a two dimensional heterojunction with impurity scattering, deviations from the Drude result are predicted. A calculation for the case of a 2d Silicon layer shows that the deviations strongly depend on the microwave polarization and the Fermi energy.
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© 1996 Kluwer Academic Publishers
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Brandes, T. (1996). Corrections to the Drude Conductivity in Systems under Microwave Irradiation. In: Kramer, B. (eds) Quantum Transport in Semiconductor Submicron Structures. NATO ASI Series, vol 326. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1760-6_18
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DOI: https://doi.org/10.1007/978-94-009-1760-6_18
Publisher Name: Springer, Dordrecht
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