Abstract
Electrical current fluctuations through tunnel junctions are studied with a scanning-tunneling microscope. For single-tunnel junctions classical Poisson shot noise is observed, indicative for uncorrelated tunneling of electrons. For double-barrier tunnel junctions, formed by a nanoparticle between tip and surface, the shot noise is observed to be suppressed below the Poisson value. For strongly asymmetric junctions, where a Coulomb staircase is observed in the current-voltage characteristic, the shot-noise suppression is periodic in the applied voltage. This originates from correlations in the transfer of electrons imposed by single-electron charging effects.
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© 1996 Kluwer Academic Publishers
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Birk, H., Schönenberger, C., De Jong, M.J.M. (1996). Shot-Noise Suppression in the Single-Electron Tunneling Regime. In: Kramer, B. (eds) Quantum Transport in Semiconductor Submicron Structures. NATO ASI Series, vol 326. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1760-6_16
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DOI: https://doi.org/10.1007/978-94-009-1760-6_16
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