Abstract
We have fabricated a Metal Oxide Silicon Single Electron Transistor (MOSSET), in which a small island of electrons is isolated by tunnel barriers. The charging energy of the island is 15meV, and the natural line width, which results from the coupling to the leads, is > 500 µeV. Tunneling spectra show that the typical excitation energy for a fixed number of electrons is ∼4meV. In the future, these devices will allow exploration of the regime in which the electrons on the island and in the leads interact coherently.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J.F.H. Scott-Thomas, Stuart B. Field, M.A. Kastner, Henry I. Smith, and D.A. Antoniadis, Phys. Rev. Lett. 62, 583, (1989).
C. de Graaf, J. Caro, S. Radelaar, V. Lauer, and K. Heyers Phys. Rev. B 44, 9072, (1991).
Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, M. Tabe, Electron. Lett. 31 136 (1995).
David Abusch-Magder et al., to be published.
See for example Figure 6 on page 181 of H. van Houten, C.W.J Beenakker, A.A.M. Staring, in Single Charge Tunneling, NATO ASI Series B, edited by H. Grabert and M.H. Devoret (Plenum, New York, 1992).
C.W.J. Beenakker, Phys. Rev. B 44, 1646 (1991).
E.B. Foxman, U. Meirav, P.L. McEuen, M.A. Kastner, P.A. Belk, D.M. Abusch, and S.J. Wind, Phys. Rev. B 50, 14193 (1994).
E.B Foxman, P.L. McEuen, U. Meirav, Ned S. Wingreen Yigal Meir, Paul A. Belk, N.R. Belk, M.A. Kastner, and S.J. Wind, Phys. Rev. B 47, 10020 (1993).
M. Amman, K. Mullen, E. Ben-Jacob, J. Appl. Phys. 65, 339, (1989).
D.J. Thouless, Phys. Rev. Lett. 39, 1167 (1977).
M.A. Kastner, Rev. Mod. Phys. 64, 849 (1992).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Kluwer Academic Publishers
About this chapter
Cite this chapter
Abusch-Magder, D. et al. (1996). Coulomb Blockade in a Silicon Mosset. In: Kramer, B. (eds) Quantum Transport in Semiconductor Submicron Structures. NATO ASI Series, vol 326. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1760-6_12
Download citation
DOI: https://doi.org/10.1007/978-94-009-1760-6_12
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7287-8
Online ISBN: 978-94-009-1760-6
eBook Packages: Springer Book Archive