Abstract
Simulation of semiconductor devices has reached some maturity for device structures that can be described by the system of device equations given by Shockley [1, 2]. High energy transport, including hot electron effects such as impact ionization and gate currents, can be correctly simulated by full band Monte Carlo approaches [3] (solving Boltzmann-type equations) and has also matured into the realm of engineering; the missing pieces being mainly standardization and numerical efficiency. Correspondingly, commercial packages, which solve the Shockley equation system (even in three dimensions) and feature full band Monte Carlo post processors, are available or are in the final stages of development. Complex full band Monte Carlo device codes are also available [4].
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References
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© 1996 Kluwer Academic Publishers
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Hess, K., Von Allmen, P., Grupen, M., Register, L.F. (1996). Simulating Electronic Transport in Semiconductor Nanostructures. In: Luryi, S., Xu, J., Zaslavsky, A. (eds) Future Trends in Microelectronics. NATO ASI Series, vol 323. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1746-0_19
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DOI: https://doi.org/10.1007/978-94-009-1746-0_19
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