Abstract
Laser-induced deposition from the gas phase has been extensively studied in the last several years. Because a high degree of spatial localization can be achieved via deposition employing a tightly focused laser beam, a number of applications for laser deposition have been found in the microelectronics field. For example, highly localized deposition induced by a scanning, focused cw laser beam has been successfully used for direct writing of interconnection lines in integrated circuits (1–4). Related applications have been found in integrated circuit modification and customization (5), direct-writing of waveguides (6), and localized deposition for repair of clear defects in lithographic masks (7–9). A mask repair system based on laser deposition of a metal repair patch is now commercially available (10)
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Jackson, R.L., Kodas, T.T., Tyndall, G.W., Baum, T.H., Comita, P.B. (1988). Mechanisms of Laser-Induced Deposition from the Gas Phase. In: Ehrlich, D.J., Nguyen, V.T. (eds) Emerging Technologies for In Situ Processing. NATO ASI Series, vol 139. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1409-4_8
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DOI: https://doi.org/10.1007/978-94-009-1409-4_8
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