Abstract
Energetic particle beams are now widely used in the fabrication of semiconductor devices and integrated circuits [1]. In this broad arena of novel processes for semiconductor devices, the development of focused ion beam technology has been a major new development. By being able to produce a sub-micron ion beam a host of new devices and applications can be pursued. As shown in Table 1, these applications range from sub-micron scale analysis to localized ion milling to high resolution lithography to ion-assisted chemical processing and last, but by no means least, to maskless and resistless ion implantation, which for the first time can be varied in the lateral direction across the wafer surface.
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© 1988 Martinus Nijhoff Publishers
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Steckl, A.J., Corelli, J.C., McDonald, J.F., Jin, H.S., Higuichi-Rusli, R. (1988). Focused Ion Beam Technology and Applications. In: Ehrlich, D.J., Nguyen, V.T. (eds) Emerging Technologies for In Situ Processing. NATO ASI Series, vol 139. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1409-4_20
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DOI: https://doi.org/10.1007/978-94-009-1409-4_20
Publisher Name: Springer, Dordrecht
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