Skip to main content
SpringerLink
Log in
Book cover

Microelectronic Materials and Processes pp 247–273Cite as

Dielectric Materials

  • Chapter

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

Deposited insulatorst and dielectricsf have played an important role throughout the development and fabrication of semiconductor microcircuits over the years. Their major functions have been for isolating circuit elements, serving as material for storage capacitors, masking against or gettering of trace impurities, masking against oxygen and dopant diffusion, passivating and protecting device surfaces, insulating double-level conductor lines, and tapering or planarizing the device topography.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   429.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   549.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   549.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. W. Kern and V. S. Ban, Thin Film Processes, J. L. Vossen and W. Kern, Eds.,Academic Press, New York (1978), p. 257.

    Google Scholar 

  2. S. M. Ojha, Physics of Thin Films, Vol. 12, G. Hass, M. H. Francome, and J. L. Vossen, Eds., Academic Press, New York (1982), p. 237.

    Google Scholar 

  3. W. Kern, Semicond. Int., 3 (3) 89 (1982).

    Google Scholar 

  4. T. D. Bonifield, Deposition Technologies for Films and Coatings: Development and Applications, Noyes, Park Ridge, New Jersey (1982), p. 365.

    Google Scholar 

  5. J. Y. Chen, R. C. Henderson, J. T. Hall, and J. W. Peters, J. Electrochem. Soc, 131, 2146 (1984).

    Article  CAS  Google Scholar 

  6. W. Kern, G. L. Schnable, and A. W. Fisher, RCA Rev., 37, 3 (1976).

    CAS  Google Scholar 

  7. R. A. Bowling and G. B. Larrabee, J. Electrochem. Soc., 132, 141 (1985).

    Article  CAS  Google Scholar 

  8. W. Kern and G. L. Schnable, IEEE Trans. Electron Devices, ED-26, 647 (1979).

    Article  CAS  Google Scholar 

  9. W. Kern and G. L. Schnable, RCA Rev., 43, 423 (1982).

    CAS  Google Scholar 

  10. W. Kern and R. K. Smeltzer, Solid State Technol., 28 (6), 171 (1985).

    CAS  Google Scholar 

  11. A. Mumtaz, I. Drapkin, and R. Mathew, J. Vac Sci. & Technol., A2, 237 (1984).

    Article  Google Scholar 

  12. P. Chang, Semicond. Int., 7 (11), 79 (1984).

    Google Scholar 

  13. A. M. Wilson, Thin Solid Films, 83, 145 (1981).

    Article  CAS  Google Scholar 

  14. W. Kern, A. W. Fisher, and W. Kurylo, RCA Laboratories, unpublished work.

    Google Scholar 

  15. A. K. Sinha, Solid State Technol, 23 (4), 133 (1980).

    CAS  Google Scholar 

  16. K. Takasaki, K. Koyama, and M. Takagi, Extended Abstr., Electrochem. Soc, 80-2,767 (1980).

    Google Scholar 

  17. G. W. B. Ashwell and S. J. Wright, Semicond. Int., 8 (1), 132 (1985).

    Google Scholar 

  18. A. R. Shimkunas, Solid State Technol., 27 (9), 192 (1984).

    CAS  Google Scholar 

  19. A. C. Adams, C. D. Capio, S. E. Haszko, G. I. Parisi, E. I. Povilonis, and McD. Robinson, J. Electrochem. Soc, 126, 313 (1979).

    Article  CAS  Google Scholar 

  20. A. E. T. Kuiper, F. H. P. M. Habraken, A. Van Oostrom, and Y. Tamminga, Philips J. Res., 38, 1 (1983).

    CAS  Google Scholar 

  21. A. E. T. Kuiper, S. W. Koo, F. H. P. M. Habraken, and Y. Tamminga, J. Vac Sci. & Technol., B1, 62 (1983).

    Article  Google Scholar 

  22. E. C. Douglas, RCA Engineer, 26 (2), 8 (1980).

    Google Scholar 

  23. A. J. Learn, J. Electrochem. Soc, 132, 390 (1985).

    Article  CAS  Google Scholar 

  24. H. Y. Kumagai, Chemical Vapor Deposition 1984, McD. Robinson, C. H. J. van den Brekel, C. W. Cullen, and T. M. Blocher, Jr., Eds., The Electrochemical Society, Inc., Pennington, New Jersey (1984).

    Google Scholar 

  25. J. W. Peters, F. L. Gebhart, and T. C. Hall, Solid State Technol., 23 (9), 121 (1980).

    CAS  Google Scholar 

  26. Y. Numasawa, K. Yamazaki, and K. Hamano, Jpn. J. Appl. Phys., 22, 792 (1983).

    Article  CAS  Google Scholar 

  27. Y. Mishima, M. Hirose, Y. Osaka, K. Nagamine, Y. Ashida, N. Kitagawa, and K. Isogaya, Jpn. J. Appl. Phys., 22, 46 (1983).

    Article  Google Scholar 

  28. D. J. Ehrlich and J. Y. Tsao, VLSI Electronics: Microstructure Science, Vol. 17, N. G. Einspruch, Ed., Academic Press, New York (1983), Chapt. 3.

    Google Scholar 

  29. P. K. Boyer, W. H. Ritchie, and G. J. Collins, J. Electrochem. Soc, 129, 2155 (1982).

    Article  CAS  Google Scholar 

  30. P. Burggraaf, Semicond. Int., 7 (11), 70 (1984).

    Google Scholar 

  31. A. R. Kirkpatrick, Semicond. Int., 7 (4), 148 (1984).

    Google Scholar 

  32. J. A. Nemetz and R. E. Tressler, Solid State Technol., 26 (2), 79 (1983)

    CAS  Google Scholar 

  33. J. A. Nemetz and R. E. TresslerSolid State Technol. 26 (9), 209 (1983).

    CAS  Google Scholar 

  34. T. Y. Chiu, W. G. Oldham, and C. Hovland, J. Electrochem. Soc, 131, 2110 (1984).

    Article  CAS  Google Scholar 

  35. W. Streb and R. Hezel, J. Vac. Sci. & Technol, B2, 626 (1984).

    Article  Google Scholar 

  36. R. F. Pinizzotto, J. Vac Sci. & Technol., A2, 597 (1984).

    Google Scholar 

  37. J. R. Lineback, Electron. Week, 57 (25), 11 (1984).

    Google Scholar 

  38. W. Kern, J. L. Vossen, and G. L. Schnable, Proc 11th Reliab. Phys. Symp., IEEE, New York (1973), p. 214.

    Google Scholar 

  39. W. E. Armstrong and D. L. Tolliver, J. Electrochem. Soc, 121, 307 (1974).

    Article  CAS  Google Scholar 

  40. A. C. Adams, VLSI Technology, S. M. Sze, Ed., McGraw-Hill, New York (1983), p.93.

    Google Scholar 

  41. J. Kato and S. Iwamatsu, J. Electrochem. Soc, 131, 1145 (1984).

    Article  CAS  Google Scholar 

  42. T. Hara, H. Suzuki, and M. Furukawa, Jpn. J. Appl. Phys., 23, 452 (1984).

    Article  CAS  Google Scholar 

  43. M. Delfino and T. A. Reifsteck, IEEE Electron Device Lett., EDL-3, 116 (1982).

    Article  CAS  Google Scholar 

  44. A. Naumaan and J. T. Boyd, J. Vac. Sci. & Technol., 18, 821 (1981).

    Article  CAS  Google Scholar 

  45. K. Nassau, R. A. Levy, and D. L. Chadwick, J. Electrochem. Soc, 132, 409 (1985).

    Article  CAS  Google Scholar 

  46. T. Foster, G. Hoeye, and J. Goldman, J. Electrochem. Soc, 132, 505 (1985).

    Article  CAS  Google Scholar 

  47. A. J. Learn and W. Baerg, Thin Solid Films 130, 103 (1985).

    Article  CAS  Google Scholar 

  48. I. Avigal, Solid State Technol., 26 (10), 111 (1983)

    Google Scholar 

  49. I. Avigal, Solid State Technol. 27 (2), 123, 139 (1984).

    Google Scholar 

  50. J. E. Tong, K. Schertenleib, and R. A. Carpio, Solid State Technol., 27 (1), 161 (1984)

    Google Scholar 

  51. S. Gottesfeld and L. Gibbons, RCA Rev., 45, 179 (1984).

    Google Scholar 

  52. H. Veloric, M. P. Dugan, W. Morris, R. Denning, and G. L. Schnable, RCA Rev., 45, 230 (1984).

    Google Scholar 

  53. L. Napoli, R. K. Smeltzer, R. Donnelly, and J. Yeh, RCA Rev., 43, 458 (1982).

    Google Scholar 

  54. A. C. Adams and C. D. Capio, J. Electrochem. Soc, 128, 423 (1981).

    Article  CAS  Google Scholar 

  55. A. C. Adams, Solid State Technol, 24 (4), 178 (1981).

    Google Scholar 

  56. L. F. Johnson, K. A. Ingersoll, and J. V. Dalton, J. Vac Sci. & Technol, B1, 487 (1983).

    Google Scholar 

  57. D. Barton and C. Maze, Semicond. Int., 8 (1), 98 (1985).

    Google Scholar 

  58. R. Iscoff, Semicond. Int., 7 (10), 116 (1984).

    Google Scholar 

  59. S. T. Mastroianni, Semicond. Int., 7 (5), 155 (1984).

    Google Scholar 

  60. M. R. Gulett, VLSI Des., 6, 84 (1985).

    Google Scholar 

  61. R. M. Levin and K. Evans-Lutterodt, J. Vac Sci. & Technol, B1, 54 (1983).

    Article  Google Scholar 

  62. See, for example, Part B- “Lithography” and Part C- “Etching”, VLSI Electronics: Microstructure Science, Vol. 8, N. Einspruch and D. Brown, Eds., Academic Press, New York (1985).

    Google Scholar 

  63. See, for example, IEEE Trans. Electron Devices, ED-32, 81 (1985); Proc IEEE, 71, 547 (1983); Proc. of the 1st, 2nd, and 3rd Int. VLSI Multilevel Interconnection Conference, IEEE, New York (1984), (1985), and (1986), respectively.

    Google Scholar 

Download references

Author information

Author notes

  1. Werner Kern

    Present address: , 439 Probasco Road, East Windsor, NJ, 08520, USA

Authors and Affiliations

  1. RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey, 08543, USA

    Werner Kern

Authors
  1. Werner Kern
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. AT & T Bell Laboratories, Murray Hill, New Jersey, USA

    R. A. Levy

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Kluwer Academic Publishers

About this chapter

Cite this chapter

Kern, W. (1989). Dielectric Materials. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_6

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-0917-5_6

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-0154-7

  • Online ISBN: 978-94-009-0917-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation