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Silicon Oxidation

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Microelectronic Materials and Processes

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

Today’s VLSI technology is to a large extent based on the excellent properties of thermally grown silicon dioxide layers. SiO2 is used as gate dielectric in MOS devices, as implantation or doping mask, and for device isolation purposes.

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  1. IMEC, Leuven, Belgium

    G. J. Declerck

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  1. AT & T Bell Laboratories, Murray Hill, New Jersey, USA

    R. A. Levy

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© 1989 Kluwer Academic Publishers

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Declerck, G.J. (1989). Silicon Oxidation. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_3

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  • DOI: https://doi.org/10.1007/978-94-009-0917-5_3

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