Abstract
Starting with a brief introduction and history, this chapter covers fundamental and practical aspects of silicon epitaxial growth by chemical vapor deposition (CVD). It concludes with a discussion of epitaxial silicon technology for advanced applications.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H. C. Theuerer, J. Electrochem. Soc., 108, 649 (1961).
H. Basseches, R. C. Manz, C. O. Thomas, and S. K. Tung, Proceedings of the AIME Technical Conference on the Metallurgy of Semiconductor Materials, Interscience, New York, (1962).
J. A. Hoerni, IRE Electron Devices Meet., Washington, D.C. (1960).
P. Burggraaf, Semicond. Int., 9 (5), 68 (1986).
G. Ghidini and F. W. Smith, J. Electrochem. Soc., 131, 2924 (1984).
H-R. Chang, Proceedings of the Symposium on Defects in Silicon, Vol. 83–9, W. M. Bullis and L. C. Kimerling, Eds., The Electrochemical Society, Pennington, New Jersey (1983), p. 549.
F. Richter, G. Weidner, A. Borchardt, E. Bugiel, M. Kittler, K. Schmalz, M. Weidner, and H. Rausch, Cryst. Res. & Technol., 18, 1521 (1983).
P. van der Putte, L. J. Giling, and J. Bloem, J. Cryst. Growth, 41, 133 (1977).
R. P. Roberge, A. W. Francis Jr., S. M. Fisher, and S. C. Schmitz, Semicond. Int., 10 (1), 77 (1987).
H. M. Liaw, J. Rose, and P. L. Fejes, Solid State Technol., 27 (5), 135 (1984).
D. C. Gupta and R. Yee, J. Electrochem. Soc., 117, 1561 (1969).
S. P. Weeks, Solid State Technol., 24 (11), 111 (1981).
S. B. Kulkarni, Proceedings of the Symposium on Defects in Silicon, Vol. 83–9, W. M. Bullis and L. C. Kimerling, Eds., The Electrochemical Society, Pennington, New Jersey (1983), p. 558.
K. E. Bean and W. R. Runyan, J. Electrochem. Soc., 124, 5C (1977).
JANAF Thermochemical Tables, 2nd Ed., NSRDS-NBS 37, National Bureau of Standards, Washington (1970).
F. C. Eversteijn, P. J. W. Severin, C.H.J. van den Brekel, and H. L. Peek, J. Electrochem. Soc., 117 , 925 (1970).
J. Bloem and L. J. Giling, Current Topics in Materials Science, Vol. 1, E. Kaldis, Ed., North-Holland, Amsterdam (1978), p. 147.
T. Aoyama, Y. Inoue, and T. Suzuki,J. Electrochem. Soc., 130, 203 (1983).
J. Nishizawa and M. Saito, Proceedings of the Eighth International Conference on Chemical Vapor Deposition, Vol. 81–7, J. M. Blocher, G. E. Vuillard, and G. Wahl, Eds., The Electrochemical Society, Pennington, New Jersey (1981), p. 317.
E. Sirtl, L. P. Hunt, and D. H. Sawyer, J. Electrochem. Soc., 121, 919 (1974).
J. Bloem, W. A. P. Claassen, and W. G. J. N. Valkenburg, J. Cryst. Growth, 57, 177 (1982).
W. G. Breiland, M. E. Coltrin, and P. Ho, J. Appl. Phys., 559, 3267 (1986).
M. E. Coltrin, R. J. Kee, and J. A. Miller, J. Electrochem. Soc., 131, 325 (1984)
M. E. Coltrin, R. J. Kee, and J. A. Miller, J. Electrochem. Soc., 133, 120 (1986).
McD. Robinson, Impurity Doping Processes in Silicon, F. F. Y. Wang, Ed., North-Holland, Amsterdam (1981), p. 261.
C. L. Yaws, H. S. N. Setty, J. R. Hopper, and E. M. Swinderman, Solid State Technol., 17 (1), 47 (1974).
C. L. Yaws, J. R. Hopper, and E. M. Swinderman, Solid State Technol., 17 (11), 31 (1974).
P. Rai-Choudhury and E. I. Salkovitz, J. Cryst. Growth, 7, 361 (1970).
P. Rai-Choudhury and E. I. Salkovitz, J. Cryst. Growth, 7, 353 (1970).
T. Suzuki, Y. Inoue, M. Ura, T. Ogawa, and Y. Sugita, J. Cryst. Growth, 45, 108 (1978).
H. T. J. M. Hintzen, J. Bloem, and L. J. Giling, J. Electrochem. Soc., 131, 1900 (1984).
H. B. Pogge, Handbook on Semiconductors, Vol. 3, S. P. Keller, Ed., North-Holland, Amsterdam (1980), p. 335.
G. R. Srinivasan, J. Electrochem. Soc., 127 , 1334 (1980).
H. R. Chang, J. Electrochem. Soc., 132, 219 (1985).
G. R. Srinivasan, Silicon Processing, ASTM STP 804, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pennsylvania (1983), p. 151.
M. W. M. Graef, B. J. H. Leunissen, and H. H. C. de Moor, J. Electrochem. Soc., 132, 1942 (1985).
R. B. Herring, Solid State Technol., 22 (11), 75 (1979).
R. B. Herring, Proceedings of the Seventh International Conference on Chemical Vapor Deposition, T. O. Sedgwick and H. Lydtin, Eds., The Electrochemical Society, Princeton, New Jersey (1979), p. 126.
S. B. Kulkarni and A. A. Kozul, Extended Abstr. Electrochem. Soc., 80–2, 1351 (1980).
P. H. Langer and J. I. Goldstein, J. Electrochem. Soc., 121, 563 (1974).
P. H. Langer and J. I. Goldstein, J. Electrochem. Soc., 124, 591 (1977).
K. Tanno, F. Shimura, and T. Kawamura, J. Electrochem. Soc., 128, 395 (1981).
C. H. J. van den Brekel, J. Cryst. Growth, 23, 259 (1974).
C. M. Drum and C. A. Clark, J. Electrochem. Soc., 115, 664 (1968).
M. R. Boydston, G. A. Gruber, and D. C. Gupta, Silicon Processing, ASTM STP 804, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pennsylvania (1983), p. 175.
G. W. Cullen and J. F. Corboy, J. Cryst. Growth, 70, 230 (1984).
P. H. Lee, M. T. Wauk, R. S. Rosier, and W. C. Benzing, J. Electrochem. Soc., 124, 1824 (1977).
C. M. Melliar-Smith, Treatise on Materials Science and Technology, Vol. 11, R. K. MacCrone, Ed., Academic Press, New York (1977), p. 47.
K. V. Ravi, Imperfections and Impurities in Semiconductor Silicon, John Wiley & Sons, New York (1981).
A. Kelly and G. W. Groves, Crystallography and Crystal Defects, Addison-Wesley, Reading, Massachusetts (1970).
S. M. Hu, Appl. Phys. Lett., 22, 261 (1973).
R. C. Westhoff, R. D. Behee, and McD. Robinson, unpublished.
J. R. Patel and A. R. Chaudhuri, J. Appl. Phys., 34, 2788 (1963).
H. R. Huff, R. C. Bracken, and S. N. Rea, J. Electrochem. Soc., 118, 143 (1971).
L. D. Dyer, H. R. Huff, and W. W. Boyd, J. Appl. Phys., 42, 5680 (1971).
J. Bloem and A. H. Goemans, J. Appl. Phys., 43, 1281 (1972).
McD. Robinson, C. C. Chang, R. B. Marcus, G. A. Rozgonyi, L. E. Katz, and C. L. Paulnack, J. Electrochem. Soc., 129, 2858 (1981).
S. M. Hu and W. J. Patrick, J. Appl. Phys., 46, 1869 (1975).
H-D. Chiou, J. Moody, R. Sandfort, and F. Shimura, VLSI Science and Technology, K. E. Bean and G. A. Rozgonyi, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 59.
W. Dyson and J. Makovsky, Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, Symp. Proc. Vol. 59, J. W. Corbett, J. C. Mikkelsen Jr., S. J. Pearton and S. J. Pennycook, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 293.
H-D. Chiou, Solid State Technol., 30 (5), 77 (1987).
L. Pauling, Nature of the Chemical Bond, 3rd Ed., Cornell University Press, Ithaca, New York (1960).
F. H. Horn, Phys. Rev., 97, 1521 (1955).
H. J. Herzog, L. Csepregi, and H. Seidel, J. Electrochem. Soc., 131, 2969 (1984).
J. A. Rossi, J. Appl. Phys., 58, 1798 (1985).
C. W. Pearce and R. G. McMahon, J. Vac. Sci. & Technol., 14, 40 (1977).
J. O. Borland, M. Kuo, J. Shibley, B. Roberts, R. Schindler, and T. Dalrymple, Ninth International Conference on Chemical Vapor Deposition, McD. Robinson, C. H. J. van den Brekel, G. W. Cullen, J. M. Blocher Jr., and P. Rai-Choudhury, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 324.
W. Dyson, J. A. Rossi, L. G. Hellwig, and J. W. Moody, Ninth International Conference on Chemical Vapor Deposition, McD. Robinson, C. H. J. van den Brekel, G. W. Cullen, J. M. Blocher Jr., and P. Rai-Choudhury, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 338.
C. W. Pearch and McD. Robinson, unpublished.
J. W. Medernach, V. A. Wells, and L. L. Witherspoon, Semicond. Int. 10 (2), 106 (1987).
S. B. Kulkarni, VLSI Electronics: Microstructure Science, Vol. 6, N. G. Einspruch and G. B. Larrabee, Eds. Academic Press, New York (1983), p. 74.
P. A. Schumann Jr., R. P. Phillips, and P. J. Olshefski, J. Electrochem. Soc., 113, 368, (1966).
Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 215.
G. Horlick, Appl. Spectrosc, 22, 617 (1968).
D. L. Rehrig and C. W. Pearce, Semicond. Int., 3 (5), (1980).
P. S. Schaffer and T. R. Lally, Solid State Technol., 26 (4), 229 (1983).
W. E. Beadle, J. C. C. Tsai, and R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology, John Wiley & Sons, New York (1985).
Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 172.
Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 261.
M. Wright Jenkins, J. Electrochem. Soc., 124, 757 (1977).
D. G. Schimmel, J. Electrochem. Soc., 126, 479 (1979).
K. Graff, H. Pieper, and G. Goldbach, Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds., The Electrochemical Society, Pennington, New Jersey (1973), p. 170.
M. Zerbst, Z. Angew. Phys., 22, 30 (1966).
H. J. Kuno, IEEE Trans. Electron Devices, ED-11, 8 (1964).
D. V. Lang, J. Appl. Phys., 45, 3023 (1974).
N. Endo, K. Tanno, A. Ishitani, Y. Kurogi, and H. Tsuya, IEEE Trans. Electron Devices, ED-31, 1283 (1984).
R. Reif, J. Electrochem. Soc., 131, 2430 (1984).
T. J. Donahue and R. Reif, J. Appl. Phys., 57, 2757 (1985).
T. J. Donahue and R. Reif, J. Electrochem. Soc., 133, 1691 (1986).
B. S. Meyerson, Appl. Phys. Lett., 48, 797 (1986).
B. S. Meyerson, E. Ganin, D. A. Smith, and T. N. Nguyen, J. Electrochem. Soc., 133, 1232 (1986).
Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, J. C. Bean, Ed., The Electrochemical Society, Pennington, New Jersey (1984).
C. M. Gronet, J. C. Sturm, K. E. Williams, and J. F. Gibbons, Rapid Thermal Processing, Symp. Proc. Vol. 52, T. O. Sedgwick, T. E. Seidel and B-Y. Tsaur, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 305.
A. C. Ipri, L. Jastrzebski, J. F. Corboy, and R. Metzl, IEEE Trans. Electron Devices, ED-31, 1741 (1984).
H. I. Smith, M. W. Geis, C. V. Thompson, and C. K. Chen, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 3
P. L. F. Hement, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 207.
A. Gupta and P. K. Vasudev, Solid State Technol., 26 (2), 104 (1983).
T. Kimura, H. Yamawaki, Y. Arimoto, K. Ikeda, M. Ihara, and M. Ozeki, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 143.
H. Ishiwara and T. Asano, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 129.
D. J. Dumin, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 137.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Kluwer Academic Publishers
About this chapter
Cite this chapter
Robinson, M. (1989). Silicon Epitaxy. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_2
Download citation
DOI: https://doi.org/10.1007/978-94-009-0917-5_2
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-0154-7
Online ISBN: 978-94-009-0917-5
eBook Packages: Springer Book Archive