Skip to main content

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

Starting with a brief introduction and history, this chapter covers fundamental and practical aspects of silicon epitaxial growth by chemical vapor deposition (CVD). It concludes with a discussion of epitaxial silicon technology for advanced applications.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 429.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 549.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 549.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. H. C. Theuerer, J. Electrochem. Soc., 108, 649 (1961).

    Article  CAS  Google Scholar 

  2. H. Basseches, R. C. Manz, C. O. Thomas, and S. K. Tung, Proceedings of the AIME Technical Conference on the Metallurgy of Semiconductor Materials, Interscience, New York, (1962).

    Google Scholar 

  3. J. A. Hoerni, IRE Electron Devices Meet., Washington, D.C. (1960).

    Google Scholar 

  4. P. Burggraaf, Semicond. Int., 9 (5), 68 (1986).

    Google Scholar 

  5. G. Ghidini and F. W. Smith, J. Electrochem. Soc., 131, 2924 (1984).

    Article  CAS  Google Scholar 

  6. H-R. Chang, Proceedings of the Symposium on Defects in Silicon, Vol. 83–9, W. M. Bullis and L. C. Kimerling, Eds., The Electrochemical Society, Pennington, New Jersey (1983), p. 549.

    Google Scholar 

  7. F. Richter, G. Weidner, A. Borchardt, E. Bugiel, M. Kittler, K. Schmalz, M. Weidner, and H. Rausch, Cryst. Res. & Technol., 18, 1521 (1983).

    Article  CAS  Google Scholar 

  8. P. van der Putte, L. J. Giling, and J. Bloem, J. Cryst. Growth, 41, 133 (1977).

    Article  Google Scholar 

  9. R. P. Roberge, A. W. Francis Jr., S. M. Fisher, and S. C. Schmitz, Semicond. Int., 10 (1), 77 (1987).

    Google Scholar 

  10. H. M. Liaw, J. Rose, and P. L. Fejes, Solid State Technol., 27 (5), 135 (1984).

    CAS  Google Scholar 

  11. D. C. Gupta and R. Yee, J. Electrochem. Soc., 117, 1561 (1969).

    Article  Google Scholar 

  12. S. P. Weeks, Solid State Technol., 24 (11), 111 (1981).

    CAS  Google Scholar 

  13. S. B. Kulkarni, Proceedings of the Symposium on Defects in Silicon, Vol. 83–9, W. M. Bullis and L. C. Kimerling, Eds., The Electrochemical Society, Pennington, New Jersey (1983), p. 558.

    Google Scholar 

  14. K. E. Bean and W. R. Runyan, J. Electrochem. Soc., 124, 5C (1977).

    Article  CAS  Google Scholar 

  15. JANAF Thermochemical Tables, 2nd Ed., NSRDS-NBS 37, National Bureau of Standards, Washington (1970).

    Google Scholar 

  16. F. C. Eversteijn, P. J. W. Severin, C.H.J. van den Brekel, and H. L. Peek, J. Electrochem. Soc., 117 , 925 (1970).

    Article  CAS  Google Scholar 

  17. J. Bloem and L. J. Giling, Current Topics in Materials Science, Vol. 1, E. Kaldis, Ed., North-Holland, Amsterdam (1978), p. 147.

    Google Scholar 

  18. T. Aoyama, Y. Inoue, and T. Suzuki,J. Electrochem. Soc., 130, 203 (1983).

    Article  CAS  Google Scholar 

  19. J. Nishizawa and M. Saito, Proceedings of the Eighth International Conference on Chemical Vapor Deposition, Vol. 81–7, J. M. Blocher, G. E. Vuillard, and G. Wahl, Eds., The Electrochemical Society, Pennington, New Jersey (1981), p. 317.

    Google Scholar 

  20. E. Sirtl, L. P. Hunt, and D. H. Sawyer, J. Electrochem. Soc., 121, 919 (1974).

    Article  CAS  Google Scholar 

  21. J. Bloem, W. A. P. Claassen, and W. G. J. N. Valkenburg, J. Cryst. Growth, 57, 177 (1982).

    Article  CAS  Google Scholar 

  22. W. G. Breiland, M. E. Coltrin, and P. Ho, J. Appl. Phys., 559, 3267 (1986).

    Article  Google Scholar 

  23. M. E. Coltrin, R. J. Kee, and J. A. Miller, J. Electrochem. Soc., 131, 325 (1984)

    Article  Google Scholar 

  24. M. E. Coltrin, R. J. Kee, and J. A. Miller, J. Electrochem. Soc., 133, 120 (1986).

    Article  Google Scholar 

  25. McD. Robinson, Impurity Doping Processes in Silicon, F. F. Y. Wang, Ed., North-Holland, Amsterdam (1981), p. 261.

    Google Scholar 

  26. C. L. Yaws, H. S. N. Setty, J. R. Hopper, and E. M. Swinderman, Solid State Technol., 17 (1), 47 (1974).

    Article  CAS  Google Scholar 

  27. C. L. Yaws, J. R. Hopper, and E. M. Swinderman, Solid State Technol., 17 (11), 31 (1974).

    CAS  Google Scholar 

  28. P. Rai-Choudhury and E. I. Salkovitz, J. Cryst. Growth, 7, 361 (1970).

    Article  CAS  Google Scholar 

  29. P. Rai-Choudhury and E. I. Salkovitz, J. Cryst. Growth, 7, 353 (1970).

    Article  CAS  Google Scholar 

  30. T. Suzuki, Y. Inoue, M. Ura, T. Ogawa, and Y. Sugita, J. Cryst. Growth, 45, 108 (1978).

    Article  CAS  Google Scholar 

  31. H. T. J. M. Hintzen, J. Bloem, and L. J. Giling, J. Electrochem. Soc., 131, 1900 (1984).

    Article  CAS  Google Scholar 

  32. H. B. Pogge, Handbook on Semiconductors, Vol. 3, S. P. Keller, Ed., North-Holland, Amsterdam (1980), p. 335.

    Google Scholar 

  33. G. R. Srinivasan, J. Electrochem. Soc., 127 , 1334 (1980).

    Article  CAS  Google Scholar 

  34. H. R. Chang, J. Electrochem. Soc., 132, 219 (1985).

    Article  CAS  Google Scholar 

  35. G. R. Srinivasan, Silicon Processing, ASTM STP 804, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pennsylvania (1983), p. 151.

    Google Scholar 

  36. M. W. M. Graef, B. J. H. Leunissen, and H. H. C. de Moor, J. Electrochem. Soc., 132, 1942 (1985).

    Article  Google Scholar 

  37. R. B. Herring, Solid State Technol., 22 (11), 75 (1979).

    CAS  Google Scholar 

  38. R. B. Herring, Proceedings of the Seventh International Conference on Chemical Vapor Deposition, T. O. Sedgwick and H. Lydtin, Eds., The Electrochemical Society, Princeton, New Jersey (1979), p. 126.

    Google Scholar 

  39. S. B. Kulkarni and A. A. Kozul, Extended Abstr. Electrochem. Soc., 80–2, 1351 (1980).

    Google Scholar 

  40. P. H. Langer and J. I. Goldstein, J. Electrochem. Soc., 121, 563 (1974).

    Article  CAS  Google Scholar 

  41. P. H. Langer and J. I. Goldstein, J. Electrochem. Soc., 124, 591 (1977).

    Article  CAS  Google Scholar 

  42. K. Tanno, F. Shimura, and T. Kawamura, J. Electrochem. Soc., 128, 395 (1981).

    Article  CAS  Google Scholar 

  43. C. H. J. van den Brekel, J. Cryst. Growth, 23, 259 (1974).

    Article  Google Scholar 

  44. C. M. Drum and C. A. Clark, J. Electrochem. Soc., 115, 664 (1968).

    Article  CAS  Google Scholar 

  45. M. R. Boydston, G. A. Gruber, and D. C. Gupta, Silicon Processing, ASTM STP 804, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pennsylvania (1983), p. 175.

    Google Scholar 

  46. G. W. Cullen and J. F. Corboy, J. Cryst. Growth, 70, 230 (1984).

    Article  CAS  Google Scholar 

  47. P. H. Lee, M. T. Wauk, R. S. Rosier, and W. C. Benzing, J. Electrochem. Soc., 124, 1824 (1977).

    Article  CAS  Google Scholar 

  48. C. M. Melliar-Smith, Treatise on Materials Science and Technology, Vol. 11, R. K. MacCrone, Ed., Academic Press, New York (1977), p. 47.

    Google Scholar 

  49. K. V. Ravi, Imperfections and Impurities in Semiconductor Silicon, John Wiley & Sons, New York (1981).

    Google Scholar 

  50. A. Kelly and G. W. Groves, Crystallography and Crystal Defects, Addison-Wesley, Reading, Massachusetts (1970).

    Google Scholar 

  51. S. M. Hu, Appl. Phys. Lett., 22, 261 (1973).

    Article  CAS  Google Scholar 

  52. R. C. Westhoff, R. D. Behee, and McD. Robinson, unpublished.

    Google Scholar 

  53. J. R. Patel and A. R. Chaudhuri, J. Appl. Phys., 34, 2788 (1963).

    Article  CAS  Google Scholar 

  54. H. R. Huff, R. C. Bracken, and S. N. Rea, J. Electrochem. Soc., 118, 143 (1971).

    Article  Google Scholar 

  55. L. D. Dyer, H. R. Huff, and W. W. Boyd, J. Appl. Phys., 42, 5680 (1971).

    Article  CAS  Google Scholar 

  56. J. Bloem and A. H. Goemans, J. Appl. Phys., 43, 1281 (1972).

    Article  CAS  Google Scholar 

  57. McD. Robinson, C. C. Chang, R. B. Marcus, G. A. Rozgonyi, L. E. Katz, and C. L. Paulnack, J. Electrochem. Soc., 129, 2858 (1981).

    Article  Google Scholar 

  58. S. M. Hu and W. J. Patrick, J. Appl. Phys., 46, 1869 (1975).

    Article  CAS  Google Scholar 

  59. H-D. Chiou, J. Moody, R. Sandfort, and F. Shimura, VLSI Science and Technology, K. E. Bean and G. A. Rozgonyi, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 59.

    Google Scholar 

  60. W. Dyson and J. Makovsky, Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, Symp. Proc. Vol. 59, J. W. Corbett, J. C. Mikkelsen Jr., S. J. Pearton and S. J. Pennycook, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 293.

    Google Scholar 

  61. H-D. Chiou, Solid State Technol., 30 (5), 77 (1987).

    CAS  Google Scholar 

  62. L. Pauling, Nature of the Chemical Bond, 3rd Ed., Cornell University Press, Ithaca, New York (1960).

    Google Scholar 

  63. F. H. Horn, Phys. Rev., 97, 1521 (1955).

    Article  CAS  Google Scholar 

  64. H. J. Herzog, L. Csepregi, and H. Seidel, J. Electrochem. Soc., 131, 2969 (1984).

    Article  CAS  Google Scholar 

  65. J. A. Rossi, J. Appl. Phys., 58, 1798 (1985).

    Article  CAS  Google Scholar 

  66. C. W. Pearce and R. G. McMahon, J. Vac. Sci. & Technol., 14, 40 (1977).

    Article  CAS  Google Scholar 

  67. J. O. Borland, M. Kuo, J. Shibley, B. Roberts, R. Schindler, and T. Dalrymple, Ninth International Conference on Chemical Vapor Deposition, McD. Robinson, C. H. J. van den Brekel, G. W. Cullen, J. M. Blocher Jr., and P. Rai-Choudhury, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 324.

    Google Scholar 

  68. W. Dyson, J. A. Rossi, L. G. Hellwig, and J. W. Moody, Ninth International Conference on Chemical Vapor Deposition, McD. Robinson, C. H. J. van den Brekel, G. W. Cullen, J. M. Blocher Jr., and P. Rai-Choudhury, Eds., The Electrochemical Society, Pennington, New Jersey (1984), p. 338.

    Google Scholar 

  69. C. W. Pearch and McD. Robinson, unpublished.

    Google Scholar 

  70. J. W. Medernach, V. A. Wells, and L. L. Witherspoon, Semicond. Int. 10 (2), 106 (1987).

    Google Scholar 

  71. S. B. Kulkarni, VLSI Electronics: Microstructure Science, Vol. 6, N. G. Einspruch and G. B. Larrabee, Eds. Academic Press, New York (1983), p. 74.

    Google Scholar 

  72. P. A. Schumann Jr., R. P. Phillips, and P. J. Olshefski, J. Electrochem. Soc., 113, 368, (1966).

    Article  CAS  Google Scholar 

  73. Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 215.

    Google Scholar 

  74. G. Horlick, Appl. Spectrosc, 22, 617 (1968).

    Article  Google Scholar 

  75. D. L. Rehrig and C. W. Pearce, Semicond. Int., 3 (5), (1980).

    Google Scholar 

  76. P. S. Schaffer and T. R. Lally, Solid State Technol., 26 (4), 229 (1983).

    CAS  Google Scholar 

  77. W. E. Beadle, J. C. C. Tsai, and R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology, John Wiley & Sons, New York (1985).

    Google Scholar 

  78. Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 172.

    Google Scholar 

  79. Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, Pennsylvania (1986), p. 261.

    Google Scholar 

  80. M. Wright Jenkins, J. Electrochem. Soc., 124, 757 (1977).

    Article  Google Scholar 

  81. D. G. Schimmel, J. Electrochem. Soc., 126, 479 (1979).

    Article  CAS  Google Scholar 

  82. K. Graff, H. Pieper, and G. Goldbach, Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds., The Electrochemical Society, Pennington, New Jersey (1973), p. 170.

    Google Scholar 

  83. M. Zerbst, Z. Angew. Phys., 22, 30 (1966).

    CAS  Google Scholar 

  84. H. J. Kuno, IEEE Trans. Electron Devices, ED-11, 8 (1964).

    Article  Google Scholar 

  85. D. V. Lang, J. Appl. Phys., 45, 3023 (1974).

    Article  CAS  Google Scholar 

  86. N. Endo, K. Tanno, A. Ishitani, Y. Kurogi, and H. Tsuya, IEEE Trans. Electron Devices, ED-31, 1283 (1984).

    Article  CAS  Google Scholar 

  87. R. Reif, J. Electrochem. Soc., 131, 2430 (1984).

    Article  CAS  Google Scholar 

  88. T. J. Donahue and R. Reif, J. Appl. Phys., 57, 2757 (1985).

    Article  CAS  Google Scholar 

  89. T. J. Donahue and R. Reif, J. Electrochem. Soc., 133, 1691 (1986).

    Article  CAS  Google Scholar 

  90. B. S. Meyerson, Appl. Phys. Lett., 48, 797 (1986).

    Article  CAS  Google Scholar 

  91. B. S. Meyerson, E. Ganin, D. A. Smith, and T. N. Nguyen, J. Electrochem. Soc., 133, 1232 (1986).

    Article  CAS  Google Scholar 

  92. Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, J. C. Bean, Ed., The Electrochemical Society, Pennington, New Jersey (1984).

    Google Scholar 

  93. C. M. Gronet, J. C. Sturm, K. E. Williams, and J. F. Gibbons, Rapid Thermal Processing, Symp. Proc. Vol. 52, T. O. Sedgwick, T. E. Seidel and B-Y. Tsaur, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 305.

    Google Scholar 

  94. A. C. Ipri, L. Jastrzebski, J. F. Corboy, and R. Metzl, IEEE Trans. Electron Devices, ED-31, 1741 (1984).

    Article  CAS  Google Scholar 

  95. H. I. Smith, M. W. Geis, C. V. Thompson, and C. K. Chen, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 3

    Google Scholar 

  96. P. L. F. Hement, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 207.

    Google Scholar 

  97. A. Gupta and P. K. Vasudev, Solid State Technol., 26 (2), 104 (1983).

    CAS  Google Scholar 

  98. T. Kimura, H. Yamawaki, Y. Arimoto, K. Ikeda, M. Ihara, and M. Ozeki, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 143.

    Google Scholar 

  99. H. Ishiwara and T. Asano, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 129.

    Google Scholar 

  100. D. J. Dumin, Semiconductor-on-Insulator and Thin Film Transistor Technology, Symp. Proc. Vol. 53, A. Chiang, M. W. Geis, and L. Pfeiffer, Eds., Materials Research Society, Pittsburgh, Pennsylvania (1986), p. 137.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Kluwer Academic Publishers

About this chapter

Cite this chapter

Robinson, M. (1989). Silicon Epitaxy. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_2

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-0917-5_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-0154-7

  • Online ISBN: 978-94-009-0917-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics