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Imperfection and Impurity Phenomena

  • Chapter
Microelectronic Materials and Processes

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

The fabrication of complex VLSI and ULSI circuits in silicon involves the control of the physical, chemical, mechanical and crystallographic properties of silicon to levels of precision not hitherto required. The need to fabricate circuits of ever increasing complexity and density places greater demands on properties of material. In order to determine the requirements of materials properties for VLSI fabrication it is instructive to define the current understanding of the characteristic features of VLSI circuitry.

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  1. K. V. Ravi

    Present address: Crystallume, 3180 Porter Drive, Suite 2, Palo Alto, California, 94304, USA

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  1. Mobil Solar Energy Corporation, Waltham, Massachusetts, 02254, USA

    K. V. Ravi

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  1. AT & T Bell Laboratories, Murray Hill, New Jersey, USA

    R. A. Levy

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Ravi, K.V. (1989). Imperfection and Impurity Phenomena. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_14

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