Skip to main content
SpringerLink
Log in

Silicon Crystal Growth

  • Chapter
Microelectronic Materials and Processes

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

Solid-state electronics is the heart and brains of modern technology. It allows information to be obtained, managed, and used to control almost all types of systems, from small cameras and calculators to entire manufacturing plants. The evolution and growth of the electronics industry in the last three decades has been made possible by the availability of microelectronic circuits with ever-increasing capabilities. The continued cost-effectiveness of the circuits has been the major force that has allowed semiconductor devices to provide the heartbeat of present day technology.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 429.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 549.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 549.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. E. Billig, Proc. R. Soc. London, A235, 37 (1956).

    Google Scholar 

  2. L. H. Van Vlack, Elements of Materials Science and Engineering, 3rd Ed., Addison-Wesley, Reading, Massachusetts (1975).

    Google Scholar 

  3. A. S. Jordan, R. Caruso, and A. R. Von Neida, Bell Syst.Tech. J., 59, 593 (1980).

    CAS  Google Scholar 

  4. J. J. Darby, R. A. Brown, P. T. Geyling, A. S. Jordan, and G. A. Nikolakupoulou, J. Electrochem. Soc., 132, 470 (1985)

    Article  Google Scholar 

  5. R. K. Srivastava, P. A. Ramachandran, and M. P. Dudukovic, J. Cryst. Growth, 73, 487 (1985);

    Article  CAS  Google Scholar 

  6. W. E. Langlois, Extended Abstr. Electrochem. Soc., 87–1, 88 (1987).

    Google Scholar 

  7. W. G. Pfann, Zone Melting, 2nd Ed., John Wiley & Sons, New York (1965).

    Google Scholar 

  8. J. A. Burton, R. C. Prim, and W. P. Slichter, J. Chem. Phys., 21, 1987 (1953).

    Article  CAS  Google Scholar 

  9. W. Lin and D. W. Hill, Silicon Processing, ASTM STP 804, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pennsylvania (1984), p. 24.

    Google Scholar 

  10. K. E. Benson, W. Lin, and E. P. Martin, Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 33.

    Google Scholar 

  11. W. Lin, U.S Pat. No. 4246064, January 20, 1981, U.S Pat. No. 4352782, October 5, 1982, U.S Pat. No. 4456499, June 26, 1984, U.S Pat. No. 4190631, February 26, 1980.

    Google Scholar 

  12. W. F. Leverton, J. Appl. Phys., 29, 1241 (1958).

    Article  CAS  Google Scholar 

  13. G. Fiegl, Solid State Technol., 26 (8), 121 (1983).

    CAS  Google Scholar 

  14. K. Hoshi, T. Suzuki, Y. Okubo, and N. Isawa, Extended Abstr. Electrochem. Soc., 80–1, 811 (1980).

    Google Scholar 

  15. W. Lin and C. W. Pearce, J. Appl. Phys., 51 5540 (1980).

    Article  CAS  Google Scholar 

  16. L. E. Katz and D. W. Hill, J. Electrochem. Soc., 125, 1151 (1978)

    Article  CAS  Google Scholar 

  17. K. E. Benson, and W. Lin, J. Cryst. Growth, 70, 602 (1984).

    Article  CAS  Google Scholar 

  18. W. Lin and K. G. Moerschel, Reduced Temperature Processing for VLSI, R. Reif, Ed., The Electrochemical Society, Pennington, New Jersey (1986), p. 438.

    Google Scholar 

  19. A. Murgai, Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 113.

    Google Scholar 

  20. T. Carlberg, T. B. King, and A. F. Witt, J. Electrochem. Soc., 129, 189 (1982).

    Article  CAS  Google Scholar 

  21. K. Hoshikawa, H. Hirata, H. Nakanishi, and K. Ikuta, Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 101.

    Google Scholar 

  22. J. R. Carrathers and N. Nassau, J. Appl. Phys., 39, 5205 (1968).

    Article  Google Scholar 

  23. W. G. Cochran, Proc. Cambridge Philos. Soc., 30, 365 (1934).

    Article  Google Scholar 

  24. C. J. Varker and K. V. Ravi, Semiconductor Silicon, H. R. Huff and E. Sirtl, Ed., The Electrochemical Society, Pennington, New Jersey (1977), p. 785.

    Google Scholar 

  25. A. Usami, K. Okura, and T. Maki, J. Phys., D10, L63 (1977)

    Google Scholar 

  26. S. N. Rea and H. M. Grimes, Extended Abstr. Electrochem. Soc., 87–1, 98 (1987).

    Google Scholar 

  27. K. Daido, S. Shinoyana, and N. Inone, Rev. Electr. Commun. Lab., 27, 33 (1979).

    CAS  Google Scholar 

  28. A. J. R. de Kock, Philips Res. Rep. Suppl. 1, 105 (1973).

    Google Scholar 

  29. P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth, 30, 117 (1975).

    Article  CAS  Google Scholar 

  30. S. Shirai, Appl. Phys. Lett., 36, 156 (1980).

    Article  CAS  Google Scholar 

  31. A. Murgi, H. C. Gatos, and W. A. Westdorp, J. Electrochem. Soc., 126, 2240 (1979).

    Article  Google Scholar 

  32. J. Chikawa and S. Shira, Jpn. J. Appl. Phys. Suppl., 18, 153 (1979).

    Google Scholar 

  33. S. Kishino, Y. Mutsushita, and M. Kanamori, Appl. Phys. Lett., 35, 213 (1979).

    Article  CAS  Google Scholar 

  34. J. Wang and M. Kulkarni, Extended Abstr. Electrochem. Soc., 79–2, 1330 (1980).

    Google Scholar 

  35. R. Baron, J. P. Baukus, S. D. Allen, T. C. McGill, M. H. Young, M. H. Kimura, H. Winston, and H. V. Marsh Appl. Phys. Lett., 34, 257 (1979).

    Article  CAS  Google Scholar 

  36. J. R. Davis Jr., A. Rohatgi, R. H. Hopkins, P. D. Blais, P. Rai-Choudhury, J. R. McCormick, and H. C. Mollenkoff IEEE Trans. Electron Devices, 27, 677 (1980).

    Article  Google Scholar 

  37. N. Akiyama, N. Yatsurugi, Y. Endo, and Z. Imayoshi, Appl. Phys. Lett., 22, 630 (1973).

    Article  CAS  Google Scholar 

  38. C. B. Collins and R. O. Carlson, Phys. Rev., 108, 1409 (1957).

    Article  CAS  Google Scholar 

  39. K. G. Barraclough and P. J. Ward, Extended Abstr. Electrochem. Soc., 83–1, 474 (1983).

    Google Scholar 

  40. P. F. Schmidt and C. W. Pearce, J. Electrochem. Soc., 128, 630 (1981).

    Article  CAS  Google Scholar 

  41. J. R. Carruthers, A. F. Witt, and R. E. Reusser, Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 61.

    Google Scholar 

  42. P. Rava, J. Lagowski, and H. C. Gatos, J. Electrochem. Soc., 129, 2844 (1982).

    Article  CAS  Google Scholar 

  43. W. Lin and M. Stavola, J. Electrochem. Soc., 123, 1412 (1985).

    Article  Google Scholar 

  44. W. Lin and D. W. Hill, J. Appl. Phys., 54, 1082 (1983).

    Article  CAS  Google Scholar 

  45. T. Suzuki, N. Isawa, Y. Okubo, and K. Hoshi, Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 90

    Google Scholar 

  46. K. Hoshikawa, Jpn. J. Appl. Phys., 21, L545 (1982)

    Article  Google Scholar 

  47. K. M. Kim, J. Electrochem. Soc., 129, 427 (1982).

    Article  CAS  Google Scholar 

  48. G. M. Oreper and J. Szekely, J.Cryst. Growth, 64, 505 (1983).

    Article  CAS  Google Scholar 

  49. K. Hoshikawa, H. Kohda, and H. Hirata, Jpn. J. Appl. Phys., 23, L37 (1984).

    Article  Google Scholar 

  50. H. Hirata and N. Inone, Jpn. J. Appl. Phys., 23, L527 (1984).

    Article  Google Scholar 

  51. K. Hoshi, N. Isawa, T. Suzuki, and Y. Ohkubo, J.Electrochem. Soc., 132, 693 (1985).

    Article  CAS  Google Scholar 

  52. R. W. Series, K. G. Barraclough, D. T. J. Hurle, D. S. Kemp, and G. J. Rae, Extended Abstr. Electrochem. Soc., 85–1, 396 (1985).

    Google Scholar 

  53. D. T. J. Hurle and R. W. Series, J. Cryst. Growth, 73, 1 (1985).

    Article  CAS  Google Scholar 

  54. M. Ohwa, T. Higuchi, E. Toji, M. Watanabe, K. Homma, and S. Takasu Semiconductor Silicon, H. R. Huff, Ed., The Electrochemical Society, Pennington, New Jersey (1981), p. 117.

    Google Scholar 

  55. T. T. Braggins and R. N. Thomas, Extended Abstr. Electrochem. Soc., 86–1, 351 (1986)

    Google Scholar 

  56. T. T. Braggins and R. N. Thomas, Extended Abstr. Electrochem. Soc., 86–1, 354 (1986)

    Google Scholar 

  57. K. Yamashita, S. Kobayashi, Y. Kawatz, T. Aoki, and T. Shiraiwa, International Symposium on Semiconductor Processing, American Society for Testing and Materials, Philadelphia, Pennsylvania (1988), Abstr. #7.

    Google Scholar 

  58. G. W. Rusler, U.S. Pat. No. 2892739, June 30, 1959.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, Allentown, Pennsylvania, 18103, USA

    W. Lin & K. E. Benson

Authors
  1. W. Lin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. E. Benson
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. AT & T Bell Laboratories, Murray Hill, New Jersey, USA

    R. A. Levy

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Kluwer Academic Publishers

About this chapter

Cite this chapter

Lin, W., Benson, K.E. (1989). Silicon Crystal Growth. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_1

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-0917-5_1

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-0154-7

  • Online ISBN: 978-94-009-0917-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation