Abstract
The low temperature epitaxial crystallization of chemical vapor deposited silicon layers obtained by means of high energy ion irradiation is studied. Both the kinetics of the process and the morphology of the regrown layers are characterized. This novel procedure, in view of the small thermal budgets involved, can result interesting for possible application to the bipolar technology.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
B.Y. Tsaur and L.S. Hung, Appl. Phys. Lett. 37, 922 (1980)
M. Delfino, J.G. Groot, K.N. Ritz and P. Maillot, J. Electrochem. Soc. 136, 215 (1989)
J.S. Williams, R.G. Elliman, W.L. Brown and T.E. Seidel, Phys. Rev. Lett. 55, 1482 (1985)
F. Priolo, A. La Ferla and E. Rimini, J. Mater. Res. 3, 1212 (1988)
F. Priolo, C. Spinella, A. La Ferla, E. Rimini and G. Ferla, Appl. Surf. Sci. 43, 178 (1989)
E.F. Kennedy, L. Csepregi, J.W. Mayer and T.W. Sigmon, J. Appl. Phys. 48, 4241 (1977)
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1990 ECSC, EEC, EAEC, Brussels and Luxembourg
About this paper
Cite this paper
Priolo, F., Spinella, C., Rimini, E. (1990). Low Temperature Ion-Assisted Epitaxy of Deposited Silicon Layers. In: ESPRIT ’90. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0705-8_9
Download citation
DOI: https://doi.org/10.1007/978-94-009-0705-8_9
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6803-1
Online ISBN: 978-94-009-0705-8
eBook Packages: Springer Book Archive