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Pattern Formation during CW Laser Melting of Silicon

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Patterns, Defects and Materials Instabilities

Part of the book series: NATO ASI Series ((NSSE,volume 183))

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Abstract

We summarize our recent experimental and theoretical work on the molten-solid morphologies which form during irradiation of thin Si films by a cw, ⋋ = 10.6µm laser. We have observed a variety of ordered and disordered patterns which depend on laser intensity, spot size, polarization and angle of incidence.

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Author notes

  1. J. S. Preston

    Present address: Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada

Authors and Affiliations

  1. Department of Physics, University of Toronto and Ontario Laser and Lightwave Research Centre, Toronto, Ontario, Canada, M5S-1A7

    K. Dworschak, J. S. Preston, J. E. Sipe & H. M. Van Driel

Authors
  1. K. Dworschak
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  2. J. S. Preston
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  3. J. E. Sipe
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  4. H. M. Van Driel
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Editor information

Editors and Affiliations

  1. Service de Chimie Physique, Université Libre de Bruxelles, Brussels, Belgium

    D. Walgraef

  2. Mechanical, Aerospace and Nuclear Engineering Department, University of California, Los Angeles, USA

    N. M. Ghoniem

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© 1990 Kluwer Academic Publishers

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Dworschak, K., Preston, J.S., Sipe, J.E., Van Driel, H.M. (1990). Pattern Formation during CW Laser Melting of Silicon. In: Walgraef, D., Ghoniem, N.M. (eds) Patterns, Defects and Materials Instabilities. NATO ASI Series, vol 183. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0593-1_22

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  • DOI: https://doi.org/10.1007/978-94-009-0593-1_22

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6755-3

  • Online ISBN: 978-94-009-0593-1

  • eBook Packages: Springer Book Archive

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