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Kinetic Aspect of PACVD Modeling

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High Energy Density Technologies in Materials Science

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Abstract

A complete model for PACVD reactors involving detailed calculations of the reaction rate constants, and the diffusion coefficients of the neutral and free radical species, based on the ambipolar approximation for glow discharges, is applied to the deposition of silicon nitride from silane and ammonia, the model results are compared with experimental data obtained by an Advanced Semiconductor Materials reactor named Plasma Enhanced CVD III.

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Author information

Authors and Affiliations

  1. Dipartimento di Chimica Fisica Applicata, Politecnico di Milano, Piazza Leonardo da Vinci, 32, 30133, Milano, Italy

    Maurizio Masi & Sergio Carrà

  2. Dipartimento di Ingegneria Chimica e Materiali, Università di Cagliari, Piazza d’Armi, 09123, Cagliari, Italy

    Massimo Morbidelli

Authors
  1. Maurizio Masi
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  2. Massimo Morbidelli
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  3. Sergio Carrà
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Editor information

Editors and Affiliations

  1. Istituto Guido Donegani, Novara, Italy

    F. Garbassi  & E. Occhiello  & 

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© 1990 Kluwer Academic Publishers

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Masi, M., Morbidelli, M., Carrà, S. (1990). Kinetic Aspect of PACVD Modeling. In: Garbassi, F., Occhiello, E. (eds) High Energy Density Technologies in Materials Science. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0499-6_10

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  • DOI: https://doi.org/10.1007/978-94-009-0499-6_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6710-2

  • Online ISBN: 978-94-009-0499-6

  • eBook Packages: Springer Book Archive

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