Abstract
Ion implantation (I2) provides an alternative to the predep diffusion for doping a host material. In contrast to diffusion which is a thermal process, I2 is controlled electrically. Voltages can be switched on or off very rapidly, whereas changing temperatures is very slow. Thus, ion implantation provides greater flexibility, particularly if shallow doping depths and low doping densities are needed. The price to be paid is more complicated and expensive apparatus.
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References
See, for example, P. E. Gise and R. Blanchard, Semiconductor and Integrated Circuit Fabrication Techniques. Reston: Reston Publishing, 1979.
A number of different ion sources are described by J. F. Gibbons, “Ion Implantation in Semiconductors— Part I Range Distribution Theory and Experiment,” Proc. IEEE, 56, (3), 296–319, Mar. 1968.
Danfysik AS, Jyllinge, DK 4000 Roskilde, Denmark.
R. E. Honig, “Vapor Pressure Data for the Solid and Liquid Elements,” RCA Rev., 23, (4), 567–586, Dec. 1962
Handbook of Thin Film Materials. El Segundo: Sloan Materials Division, 1971.
J. L. Stone and J. C. Plunkett, “Recent Advances in Ion Implantation— State of the Art Review,” Solid State Technol., 9, (6), 35–44, June 1976.
Excellent diagrams showing this action are given by F. F. Morehead and B. L. Crowder, “Ion Implantation,” Sci. Am., 228, (4), 55–71, April 1973.
J. Lindhard, M. Scharff, and H. SchiØtt, “Range Concepts and Heavy Ion Ranges,” Kgl. Danske Vid. Selskab, Mat. Fys. Medd., 33, 1963.
A brief summary of the principal ideas is given by A. B. Glaser and G. E. Subak-Sharpe, Integrated Circuit Engineering, Design, Fabrication and Applications. Reading: Addison-Wesley, 1979.
J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics, Semiconductors and Related Materials, 2nd Ed. Stroudsburg: Dowden, Hutchinson, and Ross, 1975. Renewed © by John Wiley & Sons.
G. A. Gruber, “Ion Implant Testing for Production Control,” Solid State Technol., 26, (8), 159–167, Aug. 1983.
R. A. Colclaser, Microelectronics: Processing and Device Design. New York: Wiley, 1980.
An excellent general reference is J. F. Gibbons, “Ion Implantation in Semiconductors—II: Damage Production and Annealing,” Proc. IEEE, 60, (9),1062–1096, Sept. 1972.
R. Ghez, G. S. Oehrlein, T. O. Sedgwick, F. F. Morehead, and Y. H. Lee, “Exact description and data fitting of ion-implanted dopant profile evolution during annealing,” App. Phys. Lett.,45 (8), 881–883, Oct. 15, 1984. This paper also shows the change in dopant profile from the implanted gaussian as the result of annealing at high temperatures in the diffusion range.
W. C. Till and J. T. Luxon, Integrated Circuits: Materials, Devices, and Fabrication. Englewood Cliffs: Prentice-Hall, 1982.
J. Sansbury, “Ion Implantation in Semiconductor Processing,” Solid State Technol.,19 (11), 31–37, Nov.1976. Table I of this reference lists the degree of achieved anneal for different temperatures.
An excellent summary is given by: J. F. Ready, B. T. McClure, and W. L. Larson, “Laser Annealing,” Scientific Honeyweller, 2, (3), 37–47, Sept. 1981. Note that this publication is an internal journal of the Honeywell Corporation.
See, for example, B. G. Streetman, Solid State Electronic Devices, 2nd. Ed. Englewood Cliffs: Prentice-Hall, 1980.
See, for example, T. Hara and T. Inada, “Ion Implantation in Gallium Arsenide,” Solid State Technol., 22, (11), 69–74, Nov. 1979.
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© 1990 Van Nostrand Reinhold
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Anner, G.E. (1990). Ion Implantation. In: Planar Processing Primer. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0441-5_8
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DOI: https://doi.org/10.1007/978-94-009-0441-5_8
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