Abstract
It is necessary in wafer processing to add conductive materials to serve as interconnects, and dielectrics as insulators on the wafer. Two commonly used methods for doing this are: physical vapor deposition (PVD), which involves vacuum evaporation and deposition, and sputtering, which takes place in a gas at low pressure. In contrast to chemical vapor deposition (CVD), these methods usually do not involve chemical reactions for conductors, but they may for certain nonconducting compounds, e.g., silicon dioxide (SiO2) or silicon nitride (Si3N4). We consider these deposition methods in this chapter [1].
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References
R. W. Berry, P. H. Hall, and M. T. Harris, Thin Film Technology. Princeton: Van Nostrand, 1968.
R. E. Honig, “Vapor Pressure Data for the Solid and Liquid Elements, ” RCA Rev, 23, (4), 567–586, Dec. 1962.
R. E. Thun, “Thick Films or Thin, ” IEEE Spectrum, 6, (10), 73–79, Oct. 1969.
Sloan Technology Corporation Handbook of Thin Film Materials Santa Barbara: Sloan Technology Division of Veeco Instruments Inc., 1970.
Sylvania Bulletin 235–1. Exeter, NH: Sylvania Emissive Products.
Sylvania Bulletin 225 GR-2 Exeter, NH: Sylvania Emissive Products.
J. B. Hedge and W. A. Bagot, “Power Parameters of Metallizing Boats, ” Res./ Dev, 13, (12), 32–37, Dec. 1971.
Veeco Catalog 71 Plainview, NJ: Veeco, 1971.
A. F. Plant, “A Little Weigh, ” Ind. Res., 13, (7), 36–39, July 1971.
S. N. Levine, Principles of Solid-State Microelectronics, New York: Holt, Rinehart and Winston, 1963.
A. Y. Cho, “Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures,” J. Appl. Phys., 41, (7), 2780–2786, June 1970.
T. E. Bell, “Innovations: Growing GaAs on silicon,” IEEE Spectrum, 23, (4), 25, April 1986.
P. H. Singer, “Molecular Beam Epitaxy,” Semicond. Int., 9, (10), 42–47, Oct. 1986.
P. E. Luscher, “Crystal Growth by Molecular Beam Epitaxy,” Solid State Technol, 20, (12), 43–51, Dec. 1877.
S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Volume 1—Process Technology. Sunset Beach: Lattice Press, 1986.
J. L. Vossen and J. J. O’Neil, “R-F Sputtering Processes,” RCA Rev, 29, (2), 149–179, June 1968.
J. E. Greene, “Epitaxial Crystal Growth by Sputter Deposition: Applications to Semiconductors, Part 1.” In CRC Critical Reviews in Solid State and Materials Sciences, ed. D. E. Schuele and R. W. Hoffman, Vol. 11, Issue 1, pp. 47–97. Boca Raton: CRC Press, 1983.
J. E. Greene, “Part 2,” loc. cit. [17] Vol. 11, Issue 3, pp. 189–227, 1984.
H. R. Koenig and L. I. Maissel, “Application of RF Discharges to Sputtering,” IBM J. Res. Dev., 14,(2) 168–171, Mar. 1970.
R. K. Waits, “Planar Magnetron Sputtering.” In Thin Film Processes, ed. J. L. Vossen and W. Kern, Chap. II - 4, New York: Academic Press, 1978.
J. L. Vossen and J. J. Cuomo, “Glow Discharge in Sputter Deposition,” loc. cit. [20], Chap. II-1.
R. M. Starnes, Design and Installation of a Diode Sputtering System, MS Thesis, EE Dept., UIUC, 1969.
R. M. Starnes, A Study of Dipolar Polarization in Silicon Nitride Films Using an Adapted Thermally Stimulated Current Technique, PhD Thesis, EE Dept. and Coordinated Science Lab., UIUC, April 1972.
N. M. Mazza, “Automatic Impedance Matching System for RF Sputtering,” IBM J. Res. Dev., 14, (2), 192–193, Mar. 1970.
F. Turner, “A New Frontier in Sputtering Equipment,” Varian Vacuum News, pp. 1, 4, Feb. 1973.
J. S. Logan, “Control of RF Sputtered Film Properties Through Substrate Tuning,” IBM J. Res. Dev., 14, (2), 172–175, Mar. 1970. Also in Solid State Technol, 13, (12), 46–48, 53, Dec. 1970.
J. A. Thornton and A. S. Penfold, “Cylindrical Magnetron Sputtering,” loc. cit. [20], Chap. II-2.
V. Hoffman, I. Weissman, and D. Sanservino, “The Thin Film,” Ind. Res., 14, (11), 50–53, Oct. 1972.
T. S. Gray, Applied Electronics, 2nd Ed New York: Wiley, 1954. Chap. 1, Art. 8d.
G. K. Wehner and G. S. Anderson, “The Nature of Physical Sputtering.” In Handbook of Thin Film Technology, ed. L. I. Maissel and R. Glang, Chap. 3. New York: McGraw-Hill, 1970.
G. K. Wehner and G. S. Anderson, loc. cit. [30], Chap. 4.
I. H. Pratt, “Thin Film Dielectric Properties of RF Sputtered Oxides,” Solid State Technol, 12, (2), 49–57, Dec. 1969.
P. D. Davidse and L. I. Maissel, “Dielectric Films through rf Sputtering,” J. Appl. Phys., 37, (2), 574–579, Feb. 1966.
“Sputter Etching & Deposition, Theory and Applications of Glow Discharges,” Circuits Manuf, 217, (2), 78–81, Feb. 1981.
L. T. Lamont, Jr., “Thin Film Notebook: Chap. VIII, R. F. Sputtering,” Varian Vacuum News, pp. 2, 4, Nov. 1972; also Chap. IX, p. 2, Feb. 1973.
K. L. Chopra, Thin Film Phenomena. New York: McGraw-Hill, 1969.
L. Kammerdiner and M. Reeder, “Codeposition vs Layering of Sputtered Silicide Films,” Semicond. Int., 7, (8), 122–126, Aug. 1984.
P. S. McLeod, “Reactive Sputtering,” Solid State Technol, 26, (10), 207–211, Oct. 1983.
K. Urbanek, “Magnetron Sputtering of Si02: An Alternative to Chemical Vapor Deposition,” Solid State Technol, 20, (4), 87–90, April 1977.
Christensen, “Characteristics and Applications of Bias Sputtering,” Solid State Technol, 13, (12), 39–45, Dec. 1970.
J. F. Smith, “Influence of DC Bias Sputtering During Aluminum Metallization,” Solid State Technol, 27, (1), 135–138, Jan. 1984.
“Ion Plating: The Best of Sputtering and Evaporation,” Circuits Manuf, 12, (1), 10, 12–14, Jan. 1972.
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© 1990 Van Nostrand Reinhold
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Anner, G.E. (1990). Physical Vapor Deposition; Sputtering. In: Planar Processing Primer. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0441-5_12
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DOI: https://doi.org/10.1007/978-94-009-0441-5_12
Publisher Name: Springer, Dordrecht
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