Abstract
Electron-hole pairs generated in less than ten picoseconds inside a high-finesse microcavity decay an order of magnitude faster than do carriers generated at the same below-transparency density 2 or 3 mm away in the same layer of bulk GaAs but with most of the top mirror etched away. It is a very surprising cavity QED effect that 300K bulk-GaAs carriers can decay radiatively by enhanced spontaneous emission better than an atomic dipole!
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Jin, R. et al. (1996). Order of Magnitude Enhanced Spontaneous Emission from Room-Temperature Bulk GaAs. In: Rarity, J., Weisbuch, C. (eds) Microcavities and Photonic Bandgaps: Physics and Applications. NATO ASI Series, vol 324. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0313-5_9
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DOI: https://doi.org/10.1007/978-94-009-0313-5_9
Publisher Name: Springer, Dordrecht
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