Abstract
The passage of laser light through a semiconductor can produce a rich variety of nonlinear optical phenomena [1–5]. The most sensitive effects occur when the photon energy is close to resonance with the band gap energy of the semiconductor. This has provided a fertile area of research for both new physics and device applications over the past 15 years.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Miller A., Miller D.A.B., and Smith S.D. (1981) Dynamical optical nonlinearities in semiconductors,Adv. Phys. 30, 697–800.
Haug H., ed. (1988)Optical nonlinearities and instabilities in semiconductors, Academic Press, San Diego.
Miller A. (1993) Semiconductors, in R.W. Eason and A. Miller (eds.), Nonlinear optics in signal processing, Chapman & Hall, London, pp. 66–99.
Van Driel H.M. (1995) Photoinduced refractive index changes in bulk semiconductors, in A. Miller, K.R. Welford and B. Daino (eds.), Nonlinear optical materials and devices for applications in information technology, NATO ASI Series, Volume 289, Kluwer Academic Publishers, Dordrecht pp. 141–181.
Miller A., (1995) Nonlinear optical devices, in M. Balkanski and I. Yanchev (eds.), Fabrication, properties and applications of low-dimensional semiconductors, Kluwer Academic Publishers, Dordrecht, pp. 383–413.
Chemla D.S. and Miller D.A.B. (1985) J. Opt. Soc. Am. B 2 1155–1173.
Schmitt-Rink S., Chemla D.S., Miller D.A.B. (1985) Phys. Rev. B 32, 6601–9.
Park S.H., Morhange J.F., Jeffery A.D., Morgan R.A., Chavez-Pirson A., Gibbs H.M., Koch S.W. and Peyghambarian N. (1988) Appl. Phys. Lett. 52, 1201–3.
Knox W.H., Fork R.L., Downer M.C., Miller D.A.B., Chemla D.S., Shank C.V., Gossard A.C. and Weigmann W. (1985) Phys. Rev. Lett. 54, 1306–9.
Manning R.J., Crust D.W., Craig D.W., Miller A. and Woodbridge K. (1988) J. Mod. Opt. 35 541–551
Miller A., Manning R.J., Milsom P.K., Hutchings D.C., Crust D.W. and Woodbridge K. (1989) J. Opt. Soc. Am. B 60, 567–578.
Feldmann J., Grossmann P., StolzW., Gobel E. and Ploog K. (1992) Semicond. Sci. Technol. 7 B130–2.
Norwood D.P., Swoboda H.E., Dawson M.D., Smirl A.L., Anderson D.R. and Hasenberg T.C. (1991) Appl. Phys. Lett. 59, 219–21;
Norwood D.P., Smirl A.L. and Swoboda H.-E. (1995) J. Appl. Phys. 77, 1113–9.
Snelling M.J., Perozzo P., Hutchings D.C., Galbraith I. and Miller A. (1994) Phys. Rev. B 49, 17160–9.
Smirl A.L., Boggess T.F., Wherrett B.S., Perryman G.P. and Miller A. (1982) Phys. Rev. Lett. 49, 933–6.
Schultheis L.M., Kuhl J., Honold A. and Tu C.W. (1986) Phys. Rev. Lett. 57,1797–1800.
Cundiff S.T., Wang H. and Steel D.G., (1992) Phys. Rev. B 46, 7248–51.
Ferreiia R. and Bastard G. (1994) Solid State Electron. 37, 851–5.
Miller D.A.B. (1990) Opt. Quantum. Electron 22 S61–98
Miller D.A.B. (1995) Quantum well optical switching devices, in A. Miller, K.R. Welford and B. Daino (eds.) Nonlinear optical materials and devices for applications in information technology, NATO ASI Series, Volume 289, Kluwer Academic Publishers, Dordrecht pp255–284.
Gibbs H.M., Tarng S.S., Jewell J.L., Weinmann D.A., Tai K., Gossard A.C., McCall S.L., Passner A. and Wiegmann W. (1982) Appl. Phys. Lett. 41, 221–3.
Oudar J.L., Kuszelewicz R., Sfez B., Michel J.C. and Planel R. (1992) Opt. Quant. Electron. 24, S193–207.
Jewell J.L., McCall S.L., Scherer A., Houh H.H., Whitaker N.A., Gossard A.C. and English J.H. (1989) Appl. Phys. Lett. 55, 22 A.
Sfez B.G., Rao E.V.K., Nissim Y.I. and Oudar J.L. (1992) Appl. Phys. Lett. 60, 607–9.
Rivera T., Ladan F.R., Izrael A., Azoulay R., Kuszelewicz R. and Oudar J.L. (1994) Appl. Phys. Lett. 64, 869–871.
Kawazoe T., Mishina T. and Masumoto Y. (1993) Jpn. J. Appl. Phys. 32, LI756–9.
Nishikawa Y., Tackeuchi A., Nakamura S., Shunichi M. and Yokoyama N. (1995) Appl. Phys. Lett. 66, 839–41.
Stegeman G.I. and Miller A. (1993) Physics of all-optical switching devices, in J.E. Midwinter (ed.) Photonics in Switching, Academic Press, Orlando, pp. 81–145.
LiKamWa P., Stitch J.E., Mason N.J., Roberts J.S. and Robson P.N. (1985) Electron. Lett. 21,26–7.
LiKamWa P., Miller A., Roberts J.S. and Robson P.N. (1991) Appl. Phys. Lett. 58,2055–7.
Shi S., LiKamWa P., Miller A., Pamulapati J., Cooke P. and Dutta M. (1995) Appl. Phys. Lett. 66, 79–81.
Atkinson D., Loh W.H., Afansjev V.V., Grudinin A.B., Seeds S.J. and Payne D.N. (1994) Opt. Lett. 19,1514–6.
Smith P.W., Silberberg Y. and Miller D.A.B. (1985) J. Opt. Soc. Am. B 2 1228–35.
Chen Y.K., Wu M.C., Tanbun-Ek T., Logan R.A. and Chin M.A. (1991) Appl. Phys. Lett. 58 1253–5.
Islam M.N., Sunderman E.R., Soccolich C.E., Bar-Joseph I., Sauer N., Chang T.Y. and Miller B.I. (1989) IEEE J. Quant. Electron. 25 2454–62.
Keller U., Knox W.H. and ’tHooft G.W. (1992) IEEE J. Quant. Electron. 28, 2123–33.
Keller U., Miller D.A.B., Boyd G.D., Chui T.H., Ferguson J.F. and Asom M.T. (1992)Opt. Lett. 17, 505–7.
Weingarten K.J., Kopf D., Brovelli L., Kamp M. and Keller U. (1994) postdeadline paper, European Conference on Lasers and Electro-Optics (Amsterdam).
Delfyett P.J., Florez L., Stoffel N., Gmitter T., Andreadakis N., Alphonse G. and Ceislik W. (1992) Opt. Lett. 17 670–2.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Kluwer Academic Publishers
About this chapter
Cite this chapter
Miller, A., Cameron, A.R., Riblet, P. (1996). Physics and Applications of Excition Saturation in MQW Structures. In: Balkanski, M. (eds) Devices Based on Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0289-3_15
Download citation
DOI: https://doi.org/10.1007/978-94-009-0289-3_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6615-0
Online ISBN: 978-94-009-0289-3
eBook Packages: Springer Book Archive