Abstract
The problem of determining the electron spectrum of disordered structures is currently being pursued with renewed interest owing to its importance from both the technological and fundamental point of view. Semiconductor device characteristics critically depend on the electronic density of states in the band gap tail region. The lack of information near the semiconductor band edges is a well known disadvantage of the experimental methods for obtaining the electronic density of states spectra at the semiconductor-dielectric interface. A number of theoretical approaches have been proposed to solve this problem but the advantage of the path-integral method in real space and time is that it provides an adequate treatment of both the states near the band gap center and the band tail states. This is the reason of choosing the latter for our problem.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Brews J. R. and Nicollian E. H. (1982) MOS Physics and Thechnology, John Wiley, New York, pp. 847– 850.
Brews, J.R. (1972) Surface potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices, J. Appl. Phys. 43, No. 5.
Feynman, R.P. and Hibbs, A. R. (1965) Quantum Mechanics and Path Integrals, McGraw-Hill, New York.
Samathiyakanit, V., J. (1974) Path-integratheory of a model disordered system, Phys. C: Solid State Physics 7, .2873–74
Sa-yakanit, V. (1979) Electron density of states in a Gaussian random potential: Path-integral approach, Physical Review B. 19, No.4, .2268.
Halperin, B.I. and Lax, M. (1966) Phys. Rev 148, 722.
Halperin, B.I. and Lax, M. (1967) Phys. Rev. 153, 802.
Edwards, S.F. and Gulyaev, V. B.(1964) Proc. Phys. Soc. 83,.445–6.
Khandekar, D.C. and Lawande, S.V. (1986) Feynman Path Integrals: Some Exact Results and Applications, Physics Reports (Review Section of Physics Letters) 137, No.2& 3,115–229.
Gergel’, V.A. and Suris, R.A. (1983) 84, 727.
Yanchev, I. Y., Koinov, Z.G. and Petkova, .M. (1981) Philosophical Magazine B 44, No.2, 307–316.
Slavcheva, G. and Yanchev, I. (1991) Potential Fluctuations Due to the Randomly Distributed Charges at the Semiconductor-Dielectric Interfaces in MIS-structures, Solid State Communications, .79, No.5, 439–441.
Janke E., Emde F. and Losch F. (1960) Tafeln Hoherer Funktionen, B.G. Teubner Verlagsgesellshaft, Stuttgart.
Prudnikov, A.P., Brichkov, Ju.A. and Marichev, O.I. (1981) Integrals and Series, Nauka, Moscow.
Prudnikov, A.P., Brichkov, Ju.A. and Marichev, O.I. (1983) Integrals and Series (Special functions), Nauka, Moscow.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Kluwer Academic Publishers
About this chapter
Cite this chapter
Slacheva, G., Yanchev, I. (1996). Path-Integral Calculation of the Electron Density of States in Mis-Structures. In: Balkanski, M. (eds) Devices Based on Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0289-3_14
Download citation
DOI: https://doi.org/10.1007/978-94-009-0289-3_14
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6615-0
Online ISBN: 978-94-009-0289-3
eBook Packages: Springer Book Archive